1. (30 pts) Semiconductor and Device Fundamentals
The figures below may be helpful in answering the following questions.
BCNO
H He
1.00794 4.002602
10
F Ne
1400
1200
1000
30
10.811 12.0107 14.00674 15.9994 18.9984033 20.1797
16
17
18
13
14
15
Al Si P S Cl Ar
26.981538 28.0855 30.973761 32.066
33
Zn Ga Ge As
34
Se
65.39 69.723 72.61 74.92160 78.96
48 49
51
52
35.4527 39.948
36
35
Br Kr
79.904 83.80
54
53
Cd In Sn Sb Te I Xe
112.411 114.818 118.710 121.760 127.60 126.90447 131.29
80
85
81
82
83
84
Hg Tl Pb Bi Po
200.39 204.3833 207.2 208.98038 (209)
86
At Rn
(210)
(222)
Mobility at 300 K in cm²/ V-S
800
500
400
Holes
200
0
1014
1015
1016
1017 1018 1019 1020 10
Total impurity concentration Ny in atoms/cm³
(3pts) Note: If you use this mobility graph in a problem, please mark the data points used in your calculation.
(17 pts) You are given three silicon samples A, B, and C which have different parameters, as
indicated in the Table 1 below. Please complete Table 1 with numeric values, showing brief
justification for your answers for full credit. Assume room temperature and n₁=1E10/cm³ for Si.
Sample A
Sample C
Wafer Type
P
Dopant
NA (/cm³)
Al & As
7E16
Sample B
n
P
1x106
ND (/cm³)
3E16
n (/cm³)
p (/cm³)
μη (cm²/V-s)
µp (cm²/V-s)
Table 1. Comparison of parameters for Samples A, B, and C
2500
4x1016
800
220
2x1617
271017
500
0
1E4
1x 1016
600
180
250
400