1 consider an n type silicon semiconductor at t 300k in...

Consider an n-type silicon semiconductor at T = 300K in which Nd = 10^16 cm^-3 and Na = 0. The intrinsic carrier concentration is assumed to be ni = 1.5 x 10^10 cm^-3. Determine the thermal equilibrium electron and hole concentrations for a given doping concentration. Where is EF relative to Ei? A piece of silicon is doped with Na = 2x10^15 cm^-3 and Nd = 1x10^15 cm^-3, ni = 1.5 x 10^10 cm^-3. What is the majority carrier? Is the silicon type n or type p? Find the electron and hole concentration at room temperature.

Transcript

00:01 So we have been given that there is an n -type semiconductor and this n -type semiconductor is maintained at temperature 300 kelvin and we are also given that nd here is 10 raised to 16 per cubic centimeter and an a here is zero.

00:27 So now in this case we need to figure out the electron and the whole concentrations for the given and doped concentrated material provided that the intrinsic charge carrier here is 1 .5 into 10 raise to 10 per cubic centimeter.

00:48 So in this case as we can observe that at the thermal equilibrium the electron and whole concentrations can be determined using the equation n -not equals half of n d plus n d whole square plus four times n i square and taking the complete root of this because n a is anyway zero so this n d minus n a that would approach to n d so upon putting the values here we get this approximately coming to 10 to par 16 per cubic centimeter and in order to determine the whole concentration so n e here is representing the electronic concentration and the whole concentration can be obtained expression n h into n e is n i square so from here we can get the whole concentration so that whole concentration would be n i square by n e so that would be 1 .5 into 10 raised to 10 whole square by n e which is 10 raised to 16 so that comes out to be approximately 2 .25 into 10 raised to 4 per cubic centimeter.

02:09 Now that's the concentration of holes and this was the concentration of intrinsic charge carriers provided that we have figured out the concentration of the electrons as well.

02:22 And now in the next part here we have been given that there is a silicon material which is doped with an a as 2 into 10 raise to 15 per cubic centimeter and and d in this case is 1 into 10 raise to 15 per cubic centimeter so here we need to figure out the majority charge carriers provided that the intrinsic charge carrier is same so let's keep a keep an eye on this intrinsic charge carrier here so here we observed that the majority charge carriers are the holes because n a is greater than n d so we can surely tell that the majority charge carriers are holes...

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