1. The doping density of a p-N GaAs/Aloz Gao. NAs junction is shown as No0-Na. Draw the charge d

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Question

1. The doping density of a p-N GaAs/Aloz Gao. NAs junction is shown as \( \mathrm{No}_{0}-\mathrm{N}_{\mathrm{a}} \). Draw the charge density ( 0 ), the electric field \( <\mathrm{E}> \), and the potential \( <\mathrm{V} \) > versus x . Show the dependences on \( x \), i.e., linear, quadratic, cubic, etc., of the charge density, the electric field, and the potential. 2. According to the material parameters of gallium arsenide, GaAs, at 300 K shown below, answer the following questions: (a) \( (5 \%) \) What is the intrinsic conductivity of GaAs? (b) \( \left(5 \%\right. \) ) What is the value of \( E_{c}-E_{1} \) of intrinsic GaA ? (c) ( \( 8 \% \) ) How much does the Fermi level shift if the GaAs is n-type doped with \( 10^{15} \mathrm{~cm}^{-3} \) compared to the intrinsic GaAs? Assuming all the donors are fully ionized. What is the conductivity of the doped GaAs?

          1. The doping density of a p-N GaAs/Aloz Gao. NAs junction is shown as \( \mathrm{No}_{0}-\mathrm{N}_{\mathrm{a}} \). Draw the charge density ( 0 ), the electric field \( <\mathrm{E}> \), and the potential \( <\mathrm{V} \) > versus x . Show the dependences on \( x \), i.e., linear, quadratic, cubic, etc., of the charge density, the electric field, and the potential.
2. According to the material parameters of gallium arsenide, GaAs, at 300 K shown below, answer the following questions:
(a) \( (5 \%) \) What is the intrinsic conductivity of GaAs?
(b) \( \left(5 \%\right. \) ) What is the value of \( E_{c}-E_{1} \) of intrinsic GaA ?
(c) ( \( 8 \% \) ) How much does the Fermi level shift if the GaAs is n-type doped with \( 10^{15} \mathrm{~cm}^{-3} \) compared to the intrinsic GaAs? Assuming all the donors are fully ionized. What is the conductivity of the doped GaAs?

1. The doping density of a p-N GaAs/Aloz Gao. NAs junction is shown as No0-Na. Draw the charge density ( 0 ), the electric field <E>, and the potential <V > versus x . Show the dependences on x, i.e., linear, quadratic, cubic, etc., of the charge density, the electric field, and the potential.
2. According to the material parameters of gallium arsenide, GaAs, at 300 K shown below, answer the following questions:
(a) (5 %) What is the intrinsic conductivity of GaAs?
(b) (5 %. ) What is the value of Ec-E1 of intrinsic GaA ?
(c) ( 8 % ) How much does the Fermi level shift if the GaAs is n-type doped with 10^15 cm^-3 compared to the intrinsic GaAs? Assuming all the donors are fully ionized. What is the conductivity of the doped GaAs?

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