Question

2. Assume that the JFET shown in Lecture 35, slide 10 is Si and has p+ regions doped with 10^18 acceptors/cm^3 and a channel with 10^16 donors/cm^3. The channel half-width a is 1 um. Calculate the pinch-off voltage VP and the built-in voltage Vbi, that is, the contact potential V0. What voltage VGD is required to cause pinch-off when V0 is included? Note: -VGD (pinch-off) is defined as the "threshold voltage" VT. With VG = -3 V, at what value of VD does the current saturate? [Hint: New Gate Voltage VG -> VG - V0] 3. If the ratio Z/L = 10 for the JFET of Problem 2 and ?n = 1000 cm^2/V-s, calculate ID(sat) for VG = 0, -2, -4, and -6 V. Plot ID(sat) vs. VD(sat). 4. For the JFET of Problem 3, plot ID vs. VD for the same four values of VG. Terminate each plot at the point of saturation.

          2. Assume that the JFET shown in Lecture 35, slide 10 is Si and has p+ regions doped with 10^18 acceptors/cm^3 and a channel with 10^16 donors/cm^3. The channel half-width a is 1 um. Calculate the pinch-off voltage VP and the built-in voltage Vbi, that is, the contact potential V0. What voltage VGD is required to cause pinch-off when V0 is included? Note: -VGD (pinch-off) is defined as the "threshold voltage" VT. With VG = -3 V, at what value of VD does the current saturate? [Hint: New Gate Voltage VG -> VG - V0]

3. If the ratio Z/L = 10 for the JFET of Problem 2 and ?n = 1000 cm^2/V-s, calculate ID(sat) for VG = 0, -2, -4, and -6 V. Plot ID(sat) vs. VD(sat).

4. For the JFET of Problem 3, plot ID vs. VD for the same four values of VG. Terminate each plot at the point of saturation.

2. Assume that the JFET shown in Lecture 35, slide 10 is Si and has p+ regions doped with 10^18 acceptors/cm^3 and a channel with 10^16 donors/cm^3. The channel half-width a is 1 um. Calculate the pinch-off voltage VP and the built-in voltage Vbi, that is, the contact potential V0. What voltage VGD is required to cause pinch-off when V0 is included? Note: -VGD (pinch-off) is defined as the "threshold voltage" VT. With VG = -3 V, at what value of VD does the current saturate? [Hint: New Gate Voltage VG -> VG - V0]

3. If the ratio Z/L = 10 for the JFET of Problem 2 and ?n = 1000 cm^2/V-s, calculate ID(sat) for VG = 0, -2, -4, and -6 V. Plot ID(sat) vs. VD(sat).

4. For the JFET of Problem 3, plot ID vs. VD for the same four values of VG. Terminate each plot at the point of saturation.

Added by Christopher S.

Question

Please give Ace some feedback