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3) Design a DC biasing network for a npn type Si BJT device using the parameters obtained the characteristics given in Figure. It is requested that, the design is to be independent of temperature sensitivity or least level of dependency to temperature variations comparing to other biasing networks. Ic (mA) 30 ?A 25 ?A 20 ?A 15 ?A 10 ?A 5 ?A IB = 0 ?A 0 5 10 15 20 VCE a) Draw the BJT network you prefer to design by into account the explanations above, and explain the reason for preferring this network b) Explain the aims and reasons in using of all the peripheral components handled on your network c) Find the base loop peripheral components values used in your design, if the input equivalent resistance and input base voltage for your network are given as 24 k? and 4 V respectively. d) Calculate and draw load line using the characteristic curve for IB = 10 ?A on figure by taking ICsat = 5 mA and ? = 220, find Q-point values for ICQ and VCEQ e) Calculate RE and RC f) Check the calculated dC bias values and point out that the transistor biasing network operates in in active region or not Note: Don't forget using resistors and capacitors as peripheral elements whatever required for your each complete design in questions (i.e. input, output terminals etc.)

          3) Design a DC biasing network for a npn type Si BJT device using the parameters obtained the characteristics given in Figure. It is requested that, the design is to be independent of temperature sensitivity or least level of dependency to temperature variations comparing to other biasing networks.

Ic (mA)
30 ?A
25 ?A
20 ?A
15 ?A
10 ?A
5 ?A
IB = 0 ?A
0 5 10 15 20 VCE

a) Draw the BJT network you prefer to design by into account the explanations above, and explain the reason for preferring this network
b) Explain the aims and reasons in using of all the peripheral components handled on your network
c) Find the base loop peripheral components values used in your design, if the input equivalent resistance and input base voltage for your network are given as 24 k? and 4 V respectively.
d) Calculate and draw load line using the characteristic curve for IB = 10 ?A on figure by taking ICsat = 5 mA and ? = 220, find Q-point values for ICQ and VCEQ
e) Calculate RE and RC
f) Check the calculated dC bias values and point out that the transistor biasing network operates in in active region or not
Note: Don't forget using resistors and capacitors as peripheral elements whatever required for your each complete design in questions (i.e. input, output terminals etc.)

3) Design a DC biasing network for a npn type Si BJT device using the parameters obtained the characteristics given in Figure. It is requested that, the design is to be independent of temperature sensitivity or least level of dependency to temperature variations comparing to other biasing networks.

Ic (mA)
30 ?A
25 ?A
20 ?A
15 ?A
10 ?A
5 ?A
IB = 0 ?A
0 5 10 15 20 VCE

a) Draw the BJT network you prefer to design by into account the explanations above, and explain the reason for preferring this network
b) Explain the aims and reasons in using of all the peripheral components handled on your network
c) Find the base loop peripheral components values used in your design, if the input equivalent resistance and input base voltage for your network are given as 24 k? and 4 V respectively.
d) Calculate and draw load line using the characteristic curve for IB = 10 ?A on figure by taking ICsat = 5 mA and ? = 220, find Q-point values for ICQ and VCEQ
e) Calculate RE and RC
f) Check the calculated dC bias values and point out that the transistor biasing network operates in in active region or not
Note: Don't forget using resistors and capacitors as peripheral elements whatever required for your each complete design in questions (i.e. input, output terminals etc.)

Added by Sonia L.

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