3. The parameters of a pn transistors are given below: Is= 3 * 10^-14A,Bf = 200, and Ib= 10 \mu A, VT = 26 mV,Vbb = 5 V. Determine (a) The collector current, (b) the base emitter voltage, Vbe, and (c) the required base resistance Rb
Added by Ver-Nica E.
Step 1
Given Parameters: - Is = \(3 \times 10^{-14} \, A\) - Bf = 200 - Ib = \(10 \, \mu A = 10 \times 10^{-6} \, A\) - VT = \(26 \, mV = 26 \times 10^{-3} \, V\) - Vbb = \(5 \, V\) Show more…
Show all steps
Your feedback will help us improve your experience
Chai Santi and 94 other Physics 102 Electricity and Magnetism educators are ready to help you.
Ask a new question
Labs
Want to see this concept in action?
Explore this concept interactively to see how it behaves as you change inputs.
Key Concepts
Recommended Videos
The parameters of the base region in a silicon npn bipolar transistor are $D_{n}=18 \mathrm{~cm}^{2} / \mathrm{s}$, $n_{B 0}=4 \times 10^{3} \mathrm{~cm}^{-3}, x_{B}=0.80 \mu \mathrm{m}$, and $A_{B E}=5 \times 10^{-5} \mathrm{~cm}^{2} .(a)$ Comparing Equa- tions (12.1) and (12.2), calculate the magnitude of $I_{S .}$ (b) Calculate the collector current for $(i) v_{B E}=0.58 \mathrm{~V},(i i) v_{\bar{H} E}=0.65 \mathrm{~V}$, and (iii) $v_{\mathrm{BE}}=0.72 \mathrm{~V}$.
A uniformly doped pnp silicon bipolar transistor has a base doping of $N_{E}=10^{16} \mathrm{~cm}^{-3}$, a collector doping of $N_{C}=10^{15} \mathrm{~cm}^{-3}$, a metallurgical base width of $x_{\overline{B 0}}=0.70 \mu \mathrm{m}$, a base minority carrier diffusion coefficient of $D_{E}=10 \mathrm{~cm}^{2} / \mathrm{s}$, and a B-E cross-sectional area of $\mathrm{A}_{B \mathcal{E}}=10^{-4} \mathrm{~cm}^{2}$. The transistor is biased in the forward-active mode with $V_{E B}=0.625 \mathrm{~V}$. Neglecting the $\mathrm{B}-\mathrm{E}$ space charge width and assuming $x_{E} \ll L_{6},(a)$ detemine the change in neutral base width as $V_{\text {ic }}$ changes from 1 to $5 \mathrm{~V},(b)$ find the corresponding change in collector current, ( $c$ ) estimate the Early voltage, and $(d)$ find the output resistance.
An npn silicon bipolar transistor has the following base parameters: $D_{n}=22 \mathrm{~cm}^{-} / \mathrm{s}$, $x_{E}=0.80 \mu \mathrm{m}$, and $n_{B 0}=2 \times 10^{4} \mathrm{~cm}^{-3} \cdot(a)$ The collector current is to be $\left|i_{c}\right|=2 \mathrm{~mA}$ when biased at $v_{B E}=0.60 \mathrm{~V}$. What is the required cross-sectional area $A_{B E}$ ? (b) Using the results of part $(a)$, what is the value of $v_{B E}$ such that $\left|i_{c}\right|=5 \mathrm{~mA} ?$
Sri K.
Recommended Textbooks
University Physics with Modern Physics
Physics: Principles with Applications
Fundamentals of Physics
Transcript
Watch the video solution with this free unlock.
EMAIL
PASSWORD