Question

3. You are given a task of growing a 0.6 µm thick silicon oxide film on [100] oriented bare Si wafer (i.e., there is no initial oxide film). Since this is a thick film (obviously not for gate oxide), you opt to use steam oxidation at 920 °C. After oxide growth for 1 hour, the system breaks down. Once the oxidation system is fixed you grow the rest of the film at 1100 °C to make up for the lost time. How long much longer will it take you to finish the 0.6 µm oxide film growth after restarting at the higher temperature? These steps will guide you. a. First calculate the oxide film thickness grown at 920 °C. Remember that there is no initial oxide film ($\tau$=0) and you are not using the dry oxide process.. b. Now calculate the time to grow the rest of the film. This time you will have to account for the presence of the pre-existing oxide film (i.e. calculate and include $\tau$) for remaining oxidation. Use the table below for Deal Grove parameters. Dry Wet (640 torr) Temperature (°C) Α (μm) Β (µm²/hr) τ (hr) Α (μm) Β (µm²/hr) 800 0.370 0.0011 9 — — 920 0.235 0.0049 1.4 0.50 0.203 1000 0.165 0.0117 0.37 0.226 0.287 1100 0.090 0.027 0.076 0.11 0.510 1200 0.040 0.045 0.027 0.05 0.720 The $\tau$ parameter is used to compensate for the rapid growth regime for thin oxides (after Deal and Grove).

          3. You are given a task of growing a 0.6 µm thick silicon oxide film on [100] oriented bare Si wafer (i.e., there is no initial oxide film). Since this is a thick film (obviously not for gate oxide), you opt to use steam oxidation at 920 °C. After oxide growth for 1 hour, the system breaks down. Once the oxidation system is fixed you grow the rest of the film at 1100 °C to make up for the lost time. How long much longer will it take you to finish the 0.6 µm oxide film growth after restarting at the higher temperature?
These steps will guide you.
a. First calculate the oxide film thickness grown at 920 °C. Remember that there is no initial oxide film ($\tau$=0) and you are not using the dry oxide process..
b. Now calculate the time to grow the rest of the film. This time you will have to account for the presence of the pre-existing oxide film (i.e. calculate and include $\tau$) for remaining oxidation.
Use the table below for Deal Grove parameters.
Dry
Wet (640 torr)
Temperature (°C)
Α (μm)
Β (µm²/hr)
τ (hr)
Α (μm)
Β (µm²/hr)
800
0.370
0.0011
9
—
—
920
0.235
0.0049
1.4
0.50
0.203
1000
0.165
0.0117
0.37
0.226
0.287
1100
0.090
0.027
0.076
0.11
0.510
1200
0.040
0.045
0.027
0.05
0.720
The $\tau$ parameter is used to compensate for the rapid growth regime for thin oxides (after Deal and Grove).

3 you are given a task of growing a 06 m thick silicon oxide film on 100 oriented bare si wafer ie there is no initial oxide film since this is a thick film obviously not for gate oxide you 93235

Added by Eric A.

Question

Please give Ace some feedback