Texts: 9 and 10, don't worry about the table at the end of the book.
8. A silicon crystal doped with boron is to have a resistivity of 4.0 Ω-cm when one half of the ingot is grown. If the Si charge weighs 60 kg, how many grams of boron-doped Si with a resistivity of 0.02 Ω-cm should be introduced into the melt to achieve the desired ingot resistivity?
9. (a) The lattice constant of Si is 5.43 Ã…. Find the nearest-neighbor distance in a diamond lattice using this lattice constant. (b) Calculate the density of Si from the lattice constant, the atomic weight, and Avogadro's number. Compare the results with those given on the Table found on the back book-endsheet.
10. Si has an atomic density of 5x10^22 atoms/cm^3. For this problem, assume they are packed in a simple cubic lattice structure (and not in a diamond lattice with 5x10^19 As atoms/cm^3 uniformly distributed). (a) What is the average spacing between Si atoms? (b) How many atoms would lie on the outermost layer (a monolayer)? (c) What would be the average spacing between As atoms?
11. Explain why a dislocation must terminate on itself or on a surface or on a volume defect.
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