Question

A class AB output stage using a two-diode bias network as shown in Fig. 11.14 utilizes diodes having the same junction area as the output transistors. For $V_{c c}=10 \mathrm{V}$ $I_{\mathrm{BIAS}}=0.5 \mathrm{mA}, R_{L}=100 \Omega, \beta_{N}=50,$ and $\left|V_{C E \mathrm{sat}}\right|=0 \mathrm{V}$ what is the quiescent current? What are the largest possible positive and negative output signal levels? To achieve a positive peak output level equal to the negative peak level, what value of $\beta_{N}$ is needed if $I_{\text {BIAS }}$ is not changed? What value of $I_{\mathrm{BIAS}}$ is needed if $\beta_{N}$ is held at $50 ?$ For this value, what does $I_{Q}$ become?

          A class AB output stage using a two-diode bias network as shown in Fig. 11.14 utilizes diodes having the same junction area as the output transistors. For $V_{c c}=10 \mathrm{V}$ $I_{\mathrm{BIAS}}=0.5 \mathrm{mA}, R_{L}=100 \Omega, \beta_{N}=50,$ and $\left|V_{C E \mathrm{sat}}\right|=0 \mathrm{V}$ what is the quiescent current? What are the largest possible positive and negative output signal levels? To achieve a positive peak output level equal to the negative peak level, what value of $\beta_{N}$ is needed if $I_{\text {BIAS }}$ is not changed? What value of $I_{\mathrm{BIAS}}$ is needed if $\beta_{N}$ is held at $50 ?$ For this value, what does $I_{Q}$ become?

Added by Santiago C.

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