Question

A depletion-type nMOS transistor has the following device parameters: $mu_n$ = 500 cm$^2$/V$cdot$s $t_{ox}$ = 345 Å $|2phi_f|$ = 0.84 V W/L = 1.0 Some laboratory measurement results of the terminal behavior of this device are shown in the table below. Using the data in the table, find the missing value of the gate voltage in the last entry. Show all of the details of your calculation. $egin{array}{|c|c|c|c|c|} hline I_{DS} (mu A) & V_D (V) & V_S (V) & V_B (V) & V_G (V) \ hline 50.0 & 3 & 0 & 0 & 0 \ 40.0 & 5 & 3 V & 0 & ? \ hline end{array}$

          A depletion-type nMOS transistor has the following device parameters:
$mu_n$ = 500 cm$^2$/V$cdot$s
$t_{ox}$ = 345 Å
$|2phi_f|$ = 0.84 V
W/L = 1.0
Some laboratory measurement results of the terminal behavior of this device are shown in the table below. Using the data in the table, find the missing value of the gate voltage in the last entry. Show all of the details of your calculation.
$egin{array}{|c|c|c|c|c|}
hline
I_{DS} (mu A) & V_D (V) & V_S (V) & V_B (V) & V_G (V) \
hline
50.0 & 3 & 0 & 0 & 0 \
40.0 & 5 & 3 V & 0 & ? \
hline
end{array}$

A depletion-type nMOS transistor has the following device parameters:
mun = 500 cm^2/Vcdots
tox = 345 Å
|2phif| = 0.84 V
W/L = 1.0
Some laboratory measurement results of the terminal behavior of this device are shown in the table below. Using the data in the table, find the missing value of the gate voltage in the last entry. Show all of the details of your calculation.
eginarray|c|c|c|c|c|
hline
IDS (mu A) VD (V) VS (V) VB (V) VG (V) hline
50.0 3 0 0 0 40.0 5 3 V 0 ? hline
endarray

Added by Thomas W.

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