a si n p junction has an acceptor doping of 2 1017cm3 on the p side and crosssectional area of 1

Question

Dominador Tan · Answer

Here in order to calculate the current we need the values which is Pn that is ni raised to the p

Madhur L · Answer

Hello students to calculate the total current density towards under the forward biased or 0 .6 v

Khushbu Rani · Answer

Hi there is a question. I say that consider the long silicon diode at a t equal to 300k with the

Chai Santi · Answer

In this question we have to find the generation current density. So it is the integral from 0 to

Khushbu Rani · Answer

Hyder is a question we say that consider the long silicon pin diode at this equal to 300 Kelvin

A Si n+ p junction has an acceptor doping of 2 * 1017/cm3 on the p side and crosssectional area of 10-2 cm2 . If majority carrier lifetime is 10 ns and corresponding diffusion coefficient is 400 cm2 /sec, estimate the current density under a reverse bias of 0.3 V at 300 K temperature