An intrinsic semiconductor with band gap energy Eg of 1 eV and equal hole and electron effective masses mH and me that equal the free electron mass is n-doped with a donor concentration of n = 10^18 cm^-3. The donor energy level is located 0.2 eV below the conduction band edge of the material. Calculate the conductivity (σ) of the material at room temperature (300 K), given a hole mobility of μ = 100 cm^2/Vs at 300 K.