An MOS capacitor is maintained at T = 300 K. d = 0.1 μm, where d is the oxide thickness, and the silicon doping is NA = 10^15 cm^-3. Compute: (a) φF (b) W when φS = φF
Physical Constants:
Electronic charge: q = 1.602 × 10^-19 C
Permittivity of vacuum: ε0 = 8.845 × 10^-14 F cm^-1
Relative permittivity of silicon: εsi/ε0 = 11.8
Relative permittivity of silicon dioxide: εsio2/ε0 = 3.9
Boltzmann's constant k: 8.617 × 10^-5 eV/K or 1.38 × 10^-23 J K^-1
Thermal voltage at T = 300 K: kT/q = 0.026 V
(6 points) An MOS capacitor is maintained at T = 300 K, d = 0.1 μm, where d is the oxide thickness, and the silicon doping is NA = 10^15 cm^-3. Compute:
(a) φF
(b) W when φS = φF