An n-channel enhancement-mode MOSFET with 50 nm thick HfO2 high-k gate dielectric (Pr = 25) has a flat band voltage of 0.5 V and substrate doping of 10^18 cm^-3. The intrinsic carrier concentration is 10^11 cm^-3, effective electron channel mobility is 250 cm^2/V·s, and Pr = 15. What is the drive current for a 50 μm wide and 2 μm long device at VG = 3 V and VD = 0.05 V? What is the saturation current at this gate bias?