Assume |VBE| = 0.7 ext V and eta = infty. +10 V +5V R5 =...

Assume $|V_{BE}| = 0.7 ext{ V}$ and $eta = infty$. +10 V +5V $R_5 = 10 ext{ k}Omega$ $R_2 = 8 ext{ k}Omega$ $R_1 = 20 ext{ k}Omega$ +5 V $R_4 = 5 ext{ k}Omega$ $R_3 = 3.6 ext{ k}Omega$ Figure P8.15 -5V D 8.42 The circuit in Fig. 8.15(a) is fabricated in the 0.18-$mu$m CMOS process whose parameters are specified in Table K.1 (Appendix K). $V_{DD} = 1.8 ext{ V}$. Design the circuit to obtain a voltage gain $A_v = -20 ext{ V/V}$. Use devices of equal length $L$ operating at $I = 100 mu A$ and $V_{ov} = 0.2 ext{ V}$. Determine the required values of $V_G$, $L$, $(W/L)_1$, and $(W/L)_2$.

Transcript

00:01 So it is given that for 0 .18 of micrometer of transistor the vth threshold voltage 0 .5 volt vtp is equals to minus of 0 .5.

00:15 So let us calculate first vg so this can be equals to vdd minus of vtp minus of vov.

00:25 So this can be equals to 1 .8 minus of 0 .5 minus of vov we have been given 0 .2 volt.

00:33 So vg what comes out 1 .05 volt that is the gate voltage across the given transistor sorry transistor this is fet right fet circuit we have been given.

00:47 Now let us calculate the transconductance gm so this can be equals to 2 times of vd divided by vov that will be equals to 2 into 100 into 10 to the power minus of 6 divided by 0 .2 what comes out 1 milli ampere per volt.

01:05 So this is what the required answer for first part of this question.

01:10 Now next thing the voltage gain can be given by minus of gm rd1 parallel to ro2 okay ro1 parallel ro2 so ro1 parallel the ro2 this can be equals to av by minus of gm.

01:33 So this can be equals to voltage gain we have been given minus 20 divided by the minus of gm we have been just calculated 1 into 10 to the power minus 3 which comes out 20 kilo ohms.

01:47 So by using this we can find our load resistance r1 which can be equals to v dash of a in terms of l divided by the drain current id.

01:56 So this can be equals to 5 volt per micrometer divided by the 100 micro amperes.

02:03 So this will comes out 50k into l divided by the micro amperes.

02:09 Similarly the ro2 that is output resistance 2 this can be calculated v dash ap into l divided by the drain current id this can be equals to 6 volt per micrometer divided by the 100 micro ampere which comes out 60 kilo ohms divided by l into l divided by micrometer and that is why we are taking the 20 kilo ohms.

02:37 So we can take ro1 parallel ro2 this we have found 20 kilo ohms substituting all the required values to be here that is 50k l by micrometer times of 60k l by micrometer...

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