At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435 V, while a certain silicon diode requires a forward bias of 0.718 V. Under the condition stated above, find the closest approximation of the ratio of reverse saturation current in germanium diode to that of silicon diode. (For silicon n=2 and for germanium n=1)
The answer is 4*10^3.