Consider a forward-biased ideal (abrupt junction, no recombination or generation in the depletion region) long PN junction diode. Sketch and label the total current, the total electron current, and the total hole current as a function of position throughout the entire device. The value of each has been given at the n-side edge of the depletion region for reference. Which side, the p- or n-side, has a higher doping level? Why?