Consider a forward-biased ideal (abrupt junction, no recombination or generation in the depletion region) long PN junction diode. This is the diagram of current:
Which side, the p- or n-side, has a higher doping level? Why?
J
p-region
Depletion
n-region
J = Jelec + Jhole
Total current
Majority carrier diffusion and drift current
Jhole
Jelec
Minority carrier diffusion current
-Wp Wn
Figure 4: Total diffusion current in a pn junction. This is the sum of the electron and hole current and also a drift component due to the electric field. The diffusion current is due to the injection of minority carriers. Adapted from Principles of Electronic Materials - S.O. Kasap.