Consider a n-channel silicon MOSFET with the following parameters: mu _(eff )=1000c(m^(2))/(s),t_(ox)=12nm, channel width W=10mu m and channel length L=2mu m. You may assume this is a long-channel MOSFET with the same p-type substrate doping as in Problem #1.
a. Calculate the drain current I_(D) when the device operates under the following conditions: V_(GS)=3V and V_(DS)=0.1V. Assume that the dielectric is SiO_(2).
b. Do some research and identify an alternative dielectric material that is being integrated into silicon MOSFETs because of its higher permittivity than SiO_(2). How would replacing the oxide with the high-k dielectric affect the drain current? Calculate the new drain current, assuming all other parameters (including dielectric thickness) remain constant.
c. Calculate V_(d, sat ) and I_(d, sat ) for each of the devices.
d. Comment on the results.
Consider a n-channel silicon MOSFET with the following parameters: eff = 1000 cm2 /s, tox = 12 nm, channel width W = 10 um and channel length L = 2 um. You may assume this is a long-channel MOSFET with the same p-type substrate doping as in Problem #1. a. Calculate the drain current Ip when the device operates under the following conditions: Vas = 3 V and Vps =0.1V.Assume that the dielectric is SiO2 b. Do some research and identify an alternative dielectric material that is being integrated into silicon MOSFETs because of its higher permittivity than SiO2. How would replacing the oxide with the high-k dielectric affect the drain current? Calculate the new drain current, assuming all other parameters (including dielectric thickness) remain constant. C. Calculate Va.sat and Id.sat for each of the devices d. Comment on the results.