Consider a Si sample under equilibrium conditions, doped with Arsenic to a concentration 10¹⁷ cm⁻³. At T = 300K, is this material n-type or p-type? What are the majority and minority carrier concentrations? As the temperature of this sample is increased, nᵢ will eventually increase to be higher than the dopant concentration. From the plot on the right, estimate the temperature at which nᵢ is 10 times higher than the dopant concentration. With the same doping concentration, what is the value of the temperature if the semiconductor is Germanium?