Consider the circuit depicted in the figure shown below. This circuit is designed using a silicon bipolar junction transistor (BJT) with a forward current gain (β) of 100, and two resistances (Rb = 1kΩ and Rc = 1kΩ). The supply voltage is Vcc = 10 volts. The currents Ib and Ic designate the base and collector currents, respectively, whereas the voltage Vce denotes the voltage between the collector and emitter.
Vcc
10 volts
1kΩ
Rb = 1kΩ
Vce
GND
Throughout this question, you will use VBE = 0.7 volts and VCEsat = 0.2 volts. Recall that VBE is the threshold voltage of the base-emitter junction, while VCEsat represents the voltage that is measured between the collector and emitter when the BJT is saturated.
What is the value of the base current Ib? Please enter the value expressed in milliamperes (mA) in the box below.
For instance, if you think that Ib = 0.1 mA, enter 100 in the box. If you think that Ib = 10 mA, enter 10 in the box.
What is the value of the collector current Ic? Please enter the value expressed in milliamperes (mA) in the box below.
For instance, if you think that Ic = 0.1 mA, enter 100 in the box. If you think that Ic = 10 mA, enter 10 in the box.
What is the value of the voltage Vce?
Please enter the value expressed in volts (V) in the box below. For instance, if you think that Vce = 10 V, enter 10 in the box. If you think that Vce = 10 mV, enter 0.01 in the box.