Question

Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration in the n-side Nd = 5×1015/cm3 and the acceptor impurity concentration in the p-side Na = 578 ×1015/cm3.Use the diode parameters: diode area = 2×10-3 cm2, ni = 1010/cm3, Dn =25 cm2/s, Dp =10 cm2/s, τn =τp = 5×10-7s, εr =11.8, Un = 1350 cm2/V.s, Up = 450 cm2/V.s Determine the following when a forward bias of 0.6 V is applied to the diode: 1. Calculate and prove that the magnitude of electric field far away from the depletion region is small compared to that in the space charge region.

          Design an ideal abrupt silicon PN-junction at 300 K such that
the donor impurity concentration in the n-side Nd =
5×1015/cm3 and the acceptor impurity concentration in
the p-side Na = 578 ×1015/cm3.Use the diode parameters:
diode area = 2×10-3 cm2, ni = 1010/cm3,
Dn =25 cm2/s, Dp =10 cm2/s, τn =τp =
5×10-7s, εr =11.8, Un = 1350 cm2/V.s, Up =
450 cm2/V.s
Determine the following when a forward bias of 0.6 V is applied
to the diode:
1. Calculate and prove that the magnitude of electric field far
away from the depletion region is small compared to that in the
space charge region.

Added by Alfonso G.

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