Determine the thickness of the gate oxide (material used is SiO2) for a MOSFET, when the oxide capacitance is 9 nF/cm². For this value of oxide capacitance, determine the value of drain current for the MOSFET considering the electron mobility as 600 cm²/Vs, W/L = 2, Vgs = 5 V, and Vds = [missing value].