Question

Consider the following p-channel MOSFET process: Substrate doping $N_D = 10^{15} ext{cm}^{-3}$, polysilicon gate doping density $N_D = 10^{20} ext{cm}^{-3}$, gate oxide thickness $t_{ox} = 650 ext{Å}$, and oxide-interface charge density $N_{ox} = 2 imes 10^{10} ext{cm}^{-2}$. Use $epsilon_{Si} = 11.7 epsilon_0$ and $epsilon_{ox} = 3.97 epsilon_0$ for the dielectric coefficients of silicon and silicon-dioxide, respectively. (a) Calculate the threshold voltage $V_{T0}$, for $V_{SB} = 0$. (b) Determine the type and the amount of channel ion implantation which are necessary to achieve a threshold voltage of $V_{T0} = -2 ext{V}$.

          Consider the following p-channel MOSFET process:
Substrate doping $N_D = 10^{15} 	ext{cm}^{-3}$, polysilicon gate doping density $N_D = 10^{20} 	ext{cm}^{-3}$, gate oxide thickness $t_{ox} = 650 	ext{Å}$, and oxide-interface charge density $N_{ox} = 2 	imes 10^{10} 	ext{cm}^{-2}$. Use $epsilon_{Si} = 11.7 epsilon_0$ and $epsilon_{ox} = 3.97 epsilon_0$ for the dielectric coefficients of silicon and silicon-dioxide, respectively.
(a) Calculate the threshold voltage $V_{T0}$, for $V_{SB} = 0$.
(b) Determine the type and the amount of channel ion implantation which are necessary to achieve a threshold voltage of $V_{T0} = -2 	ext{V}$.

Consider the following p-channel MOSFET process:
Substrate doping ND = 10^15 extcm^-3, polysilicon gate doping density ND = 10^20 extcm^-3, gate oxide thickness tox = 650 extÅ, and oxide-interface charge density Nox = 2 imes 10^10 extcm^-2. Use epsilonSi = 11.7 epsilon0 and epsilonox = 3.97 epsilon0 for the dielectric coefficients of silicon and silicon-dioxide, respectively.
(a) Calculate the threshold voltage VT0, for VSB = 0.
(b) Determine the type and the amount of channel ion implantation which are necessary to achieve a threshold voltage of VT0 = -2 extV.

Added by Corey D.

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