Energy gap and density-of-states data from 2.36 and 2.37:
Eg = 3.0 eV and Nc = Nv = 2.51 x 10^19 cm^-3.
3.20
A bar of N-type semiconductor (Np = 1 x 10^17 cm^-3, L = 1 cm, W x T = 3 mm x 0.5 mm) is used as a resistor. Calculate and compare the sheet resistances at 27°C and 700°C if the semiconductor material is (a) silicon (b) 6H silicon carbide.