For a 100 keV boron implant with a dose of $5 \times 10^{14} \text{cm}^{-2}$, calculate peak concentration. Solution: From Fig. 6a, $R_p = 0.31 \text{ µm}$ and $\sigma_p = 0.07 \text{ µm}$
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A boron implant is to be made into a 100 mm silicon wafer at 100 keV. The beam current is 1 mA and a 100 mm x 100 mm square area is implanted for a total of 5 seconds. a. What is the total implanted dose? b. What is the peak concentration in the silicon? c. Assuming a 3 x 10^15 /cm^3 background concentration what are the junction depths? d. What thickness of oxide is required to mask this implant to a factor of 10 below the background concentration? e. What thickness of photoresist is required to mask this implant to this level?
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