For flash memory select write erase operations change 0s to...

For flash memory, [ Select ] ["write", "erase"] operations change 0’s to 1’s, while [ Select ] ["erase", "write"] operations change 1’s to 0’s. Between these two basic operations, [ Select ] ["write", "erase"] is slower.

Which of the following statements are true? Check all that apply. 1) DRAM memories retain information even when no power is supplied because they incorporate circuitry that periodically refreshes the information. 2) DRAM basic cell has fewer transistors than the SRAM one and therefore, DRAM memories may have a larger storage capacity than the SRAM memories. 3) OTP ROMs are non-volatile. 4) In a Read/Write memory, bit-lines transmit the information to be stored in memory cells, while word-lines transmit the Read/Write command. 5) A 220 x 16 words memory has a 16-bit data bus and a 220-bit address bus. 6) Flash memories store information in the absence of power supply because they incorporate circuitry that periodically refreshes the information.

Adi S.

Question

For flash memory, [ Select ] ["write", "erase"] operations change 0’s to 1’s, while [ Select ] ["erase", "write"] operations change 1’s to 0’s. Between these two basic operations, [ Select ] ["write", "erase"] is slower.

Please give Ace some feedback