In silicon, the electron concentration is given by n(x)=10^15 e^-x / Ln cm^-3 for x ≥ 0 and the

1. First, we need to find the electron and hole diffusion current densities at $x=0$. The elect

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In silicon, the electron concentration is given by $n(x)=10^{15} e^{-x / L_{n}} \mathrm{~cm}^{-3}$ for $x \geq 0$ and the hole concentration is given by $p(x)=5 \times 10^{15} e^{+x / L_{p}} \mathrm{~cm}^{-3}$ for $x \leq 0 .$ The parameter values are $L_{n}=2 \times 10^{-3} \mathrm{~cm}$ and $L_{P}=5 \times 10^{-4} \mathrm{~cm}$. The electron and hole diffusion coefficients are $D_{n}=25 \mathrm{~cm}^{2} / \mathrm{s}$ and $D_{P}=10 \mathrm{~cm}^{2} / \mathrm{s}$, respectively. The total current density is defined as the sum of the electron and hole diffusion current densities at $x=0 .$ Calculate the total current density.

          In silicon, the electron concentration is given by $n(x)=10^{15} e^{-x / L_{n}} \mathrm{~cm}^{-3}$ for $x \geq 0$ and the hole concentration is given by $p(x)=5 \times 10^{15} e^{+x / L_{p}} \mathrm{~cm}^{-3}$ for $x \leq 0 .$ The parameter values are $L_{n}=2 \times 10^{-3} \mathrm{~cm}$ and $L_{P}=5 \times 10^{-4} \mathrm{~cm}$. The electron and hole diffusion coefficients are $D_{n}=25 \mathrm{~cm}^{2} / \mathrm{s}$ and $D_{P}=10 \mathrm{~cm}^{2} / \mathrm{s}$, respectively. The total current density is defined as the sum of the electron and hole diffusion current densities at $x=0 .$ Calculate the total current density.

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