In the DRAM process technology, what is the main reason behind constructing the cell capacitance using a trench structure: Cell Plate Si Capacitor Insulator Refilling Poly Storage Node Poly Si Substrate 2nd Field Oxide Trench Cell Select one: a. To reduce the leakage power of the cell b. To give the cell a more artistic look c. To increase cell density by reducing the cell planar area d. The increase the vertical thickness of the DRAM chip e. To increase the tolerance of the cell to temperature variations
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A DRAM (Dynamic Random Access Memory) cell consists of a capacitor and a transistor. The capacitor stores the bit of data as a charge, and the transistor acts as a switch that controls the access to the capacitor. Show more…
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