in this homework assume at 300 k n 1019 cm 3 o 88510 14 fcm si 117 kt 00259 exs 415 ev and eg 11

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In this homework, assume at 300 K, n = 10^19 cm^-3, Îµo = 8.85 x 10^-14 F/cm, Îµsi = 11.7, kT = 0.0259 eV, Îµxs = 4.15 eV, and Eg = 1.12 eV for silicon and ÎµsiO2 = 3.8 for SiO2. Consider a MOS capacitor with Al gate (ÎµoM = 4.15 eV) and HfO2 dielectric of thickness tox = 10 nm, electron affinity Ï‡ox = 2.8 eV, band gap Eg = 5.7 eV, and dielectric constant ÎµHfO2 = 19. The p-type substrate doping is NA = 2 x 10^17 cm^-3. The total oxide charge density is 5 x 10^10 cm^-2. (a) What SiO2 thickness would yield the same oxide capacitance of 10 nm of HfO2? This is the industry term known as equivalent oxide thickness or EOT. (b) Why is the semiconductor industry shifting from SiO2 to HfO2 for dielectric? (c) Find the flat band and threshold voltages VFB and V. (d) Sketch the low-frequency C-V curve for this device. Calculate and label the maximum and minimum capacitance per unit area (Cmax, Cmin) that can be reached.

          In this homework, assume at 300 K, n = 10^19 cm^-3, Îµo = 8.85 x 10^-14 F/cm, Îµsi = 11.7, kT = 0.0259 eV, Îµxs = 4.15 eV, and Eg = 1.12 eV for silicon and ÎµsiO2 = 3.8 for SiO2.

Consider a MOS capacitor with Al gate (ÎµoM = 4.15 eV) and HfO2 dielectric of thickness tox = 10 nm, electron affinity Ï‡ox = 2.8 eV, band gap Eg = 5.7 eV, and dielectric constant ÎµHfO2 = 19. The p-type substrate doping is NA = 2 x 10^17 cm^-3. The total oxide charge density is 5 x 10^10 cm^-2.

(a) What SiO2 thickness would yield the same oxide capacitance of 10 nm of HfO2? This is the industry term known as equivalent oxide thickness or EOT.
(b) Why is the semiconductor industry shifting from SiO2 to HfO2 for dielectric?
(c) Find the flat band and threshold voltages VFB and V.
(d) Sketch the low-frequency C-V curve for this device. Calculate and label the maximum and minimum capacitance per unit area (Cmax, Cmin) that can be reached.

in this homework assume at 300 k n 1019 cm 3 o 88510 14 fcm si 117 kt 00259 exs 415 ev and eg 112 ev for silicon and si02 38 for sio2 2 consider a mos capacitor with al gate eom 415 ev and h .8792

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