Question

Let's consider a silicon sample with unit cross sectional area as shown in the Figure 1, which is in thermal equilibrium. The following information is given: \( \mathrm{T}=300 \mathrm{~K} \), Electronic charge \( =1.6 \times 10^{-19} \mathrm{C} \), Thermal voltage \( =26 \mathrm{mV} \) Electron mobility \( =1350 \mathrm{~cm}^{2} / \mathrm{V} \)-s (a) Find the magnitude of the electric field at \( \mathrm{x}=0.5 \mu \mathrm{~m} \) [3 marks] (b) Find the magnitude of the electron drift current density at \( \mathrm{x}=0.5 \mu \mathrm{~m} \) [3 marks] Figure 1 (c) Let's assume electronic charge \( (\mathrm{q})=1.6 \times 10^{-19} \mathrm{C}, \mathrm{kT} / \mathrm{q}=25 \mathrm{mV} \) and electron mobility \( \left(\mu_{\mathrm{n}}\right)=1000 \mathrm{~cm}^{2} / V \)-s. If the concentration gradient of electrons injected into a p-type silicon sample is \( 1 \times 10^{21} \mathrm{~cm}^{-4} \), then find the magnitude of the electron diffusion current density (in \( \mathrm{A} / \mathrm{cm}^{2} \) ). \( \mathrm{k}= \) Boltzmann constant, \( \mathrm{T}= \) absolute degree temperature [4 marks]

          Let's consider a silicon sample with unit cross sectional area as shown in the Figure 1, which is in thermal equilibrium. The following information is given:
\( \mathrm{T}=300 \mathrm{~K} \), Electronic charge \( =1.6 \times 10^{-19} \mathrm{C} \), Thermal voltage \( =26 \mathrm{mV} \)
Electron mobility \( =1350 \mathrm{~cm}^{2} / \mathrm{V} \)-s
(a) Find the magnitude of the electric field at \( \mathrm{x}=0.5 \mu \mathrm{~m} \)
[3 marks]
(b) Find the magnitude of the electron drift current density at \( \mathrm{x}=0.5 \mu \mathrm{~m} \)
[3 marks]

Figure 1
(c)

Let's assume electronic charge \( (\mathrm{q})=1.6 \times 10^{-19} \mathrm{C}, \mathrm{kT} / \mathrm{q}=25 \mathrm{mV} \) and electron mobility \( \left(\mu_{\mathrm{n}}\right)=1000 \mathrm{~cm}^{2} / V \)-s. If the concentration gradient of electrons injected into a p-type silicon sample is \( 1 \times 10^{21} \mathrm{~cm}^{-4} \), then find the magnitude of the electron diffusion current density (in \( \mathrm{A} / \mathrm{cm}^{2} \) ). \( \mathrm{k}= \) Boltzmann constant,
\( \mathrm{T}= \) absolute degree temperature
[4 marks]

Let's consider a silicon sample with unit cross sectional area as shown in the Figure 1, which is in thermal equilibrium. The following information is given:
T=300 K, Electronic charge =1.6 × 10^-19C, Thermal voltage =26 mV
Electron mobility =1350 cm^2 / V-s
(a) Find the magnitude of the electric field at x=0.5 μ m
[3 marks]
(b) Find the magnitude of the electron drift current density at x=0.5 μ m
[3 marks]

Figure 1
(c)

Let's assume electronic charge (q)=1.6 × 10^-19C, kT / q=25 mV and electron mobility (μn)=1000 cm^2 / V-s. If the concentration gradient of electrons injected into a p-type silicon sample is 1 × 10^21 cm^-4, then find the magnitude of the electron diffusion current density (in A / cm^2 ). k= Boltzmann constant,
T= absolute degree temperature
[4 marks]

Added by Carl C.

Question

Please give Ace some feedback