Question

1. (a) Find the (i) (10pts) maximum depletion width, (ii) (10pts) minimum capacitance, and (iii) (10pts) threshold voltage for an ideal MOS capacitor with a 5nm SiO2 oxide (? = 3.9??) on p-type Si with NA = 5x10¹?/cm³. The electron affinity of Si is 4.05 eV and the bandgap is 1.12 eV. (b) Now include the effect of flat band voltage assuming an p? poly crystalline silicon (polysilicon) gate and a fixed surface state density of (1.602x10?¹?)(10¹¹) C/cm². You assume that the Fermi level of the p? polysilicon gate is at the valence band edge of the polysilicon, and that the polysilicon has the same electron affinity and bandgap as Si. Use this information to first determine \(\phi_{ms}\). Determine the (i) (10pts) flat band voltage, VFB, and the (ii) (10pts) threshold voltage, Vt.

          1. (a) Find the (i) (10pts) maximum depletion width, (ii) (10pts) minimum capacitance, and (iii) (10pts)
threshold voltage for an ideal MOS capacitor with a 5nm SiO2 oxide (? = 3.9??) on p-type Si with NA = 
5x10¹?/cm³. The electron affinity of Si is 4.05 eV and the bandgap is 1.12 eV.
(b) Now include the effect of flat band voltage assuming an p? poly crystalline silicon (polysilicon) gate
and a fixed surface state density of (1.602x10?¹?)(10¹¹) C/cm². You assume that the Fermi level of the p?
polysilicon gate is at the valence band edge of the polysilicon, and that the polysilicon has the same
electron affinity and bandgap as Si. Use this information to first determine \(\phi_{ms}\). Determine the (i) (10pts)
flat band voltage, VFB, and the (ii) (10pts) threshold voltage, Vt.

1. (a) Find the (i) (10pts) maximum depletion width, (ii) (10pts) minimum capacitance, and (iii) (10pts)
threshold voltage for an ideal MOS capacitor with a 5nm SiO2 oxide (? = 3.9??) on p-type Si with NA =
5x10¹?/cm³. The electron affinity of Si is 4.05 eV and the bandgap is 1.12 eV.
(b) Now include the effect of flat band voltage assuming an p? poly crystalline silicon (polysilicon) gate
and a fixed surface state density of (1.602x10?¹?)(10¹¹) C/cm². You assume that the Fermi level of the p?
polysilicon gate is at the valence band edge of the polysilicon, and that the polysilicon has the same
electron affinity and bandgap as Si. Use this information to first determine ϕms. Determine the (i) (10pts)
flat band voltage, VFB, and the (ii) (10pts) threshold voltage, Vt.

Added by Adam C.

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