Question

Otherwise specified, assume that T=300K. silicon ɛ=12 1. Consider an abrupt Si junction with $N_{ap}=10^{16} cm^{-3}$ and $N_{dp}^{+}=2\times10^{15} cm^{-3}$ on the p side and only $N_{dn}^{+}=2\times10^{15} cm^{-3}$ on the n side. a. Calculate the contact potential b. Calculate the depletion width $W_0$ at equilibrium c. Calculate the equilibrium depletion values $x_{n0}$ and $x_{p0}$. d. Calculate the depletion width W for a reverse bias of V=-100V.

Name: otherwise specified assume that t300k silicon 12 1 consider an abrupt si junction with nap1016 cm 3 and ndp2times1015 cm 3 on the p side and only ndn2times1015 cm 3 on the n side a calcul 39109
Uploaded: 2024-05-20T11:32:15-08:00
Duration: 2 min 35 s
Channel: Adi S
Description: otherwise specified assume that t300k silicon 12 1 consider an abrupt si junction with nap1016 cm 3 and ndp2times1015 cm 3 on the p side and only ndn2times1015 cm 3 on the n side a calcul 39109

          Otherwise specified, assume that T=300K. silicon ɛ=12
1. Consider an abrupt Si junction with $N_{ap}=10^{16} cm^{-3}$ and $N_{dp}^{+}=2\times10^{15} cm^{-3}$ on the p side and only
$N_{dn}^{+}=2\times10^{15} cm^{-3}$ on the n side.
a. Calculate the contact potential
b. Calculate the depletion width $W_0$ at equilibrium
c. Calculate the equilibrium depletion values $x_{n0}$ and $x_{p0}$.
d. Calculate the depletion width W for a reverse bias of V=-100V.

otherwise specified assume that t300k silicon 12 1 consider an abrupt si junction with nap1016 cm 3 and ndp2times1015 cm 3 on the p side and only ndn2times1015 cm 3 on the n side a calcul 39109

Added by Cory H.

University Physics with Modern Physics

Hugh D. Young 14th Edition

Instant Answer

Solved by Expert Adi S

05/20/2024

Step 1

Calculate the contact potential The contact potential $V_0$ is given by: $$V_0 = \frac{kT}{q} \ln\left(\frac{N_A N_D}{n_i^2}\right)$$ where $k$ is Boltzmann's constant ($1.38 \times 10^{-23} J/K$), $T$ is the temperature (300K), $q$ is the elementary charge ($1.6 Show more…

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Otherwise specified, assume that T=300K. silicon ɛ=12 1. Consider an abrupt Si junction with $N_{ap}=10^{16} cm^{-3}$ and $N_{dp}^{+}=2\times10^{15} cm^{-3}$ on the p side and only $N_{dn}^{+}=2\times10^{15} cm^{-3}$ on the n side. a. Calculate the contact potential b. Calculate the depletion width $W_0$ at equilibrium c. Calculate the equilibrium depletion values $x_{n0}$ and $x_{p0}$. d. Calculate the depletion width W for a reverse bias of V=-100V.