A silicon pn junction diode is created such that xn = 100xp with a built-in potential of 0.8 V. Use the following constants for this problem: ε = 11.0 and ε0 = 8.85x10^-14 F/cm, ni = 1.5x10^10 cm^3, V = 26 mV, q = 1.6x10^-19 C.
p-type
W0
n-type
NA * Xp
ND * Xn
W0 = Xn + Xp / (q * (NA * Np) / (NA + ND))
Vo = V * ln(ND / ni * NA)
NA * Xp = Np * Xn
Find the values of NA and Np.