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TRUE/FALSE. Write 'T' if the statement is true and 'F' if the statement is false. 1) For normal operation, the gate-source junction of a JFET is reverse-biased. 2) The maximum drain current in a JFET is IDSS, which occurs at VGS = 0 V. 3) The transconductance curve has the same shape as the transfer curve. 4) JFETs and MOSFETs are often referred to as square-law devices. 5) The input structure of a MOSFET is a reverse-biased diode. 6) Dual-gate MOSFETs can be either depletion or enhancement devices. 7) All MOSFETs are subject to damage from electrostatic discharge. MULTIPLE CHOICE. Choose the one alternative that best completes the statement or answers the question. 8) Assume an n-channel JFET has a VGS(off) of -8 V. If VGS = -4 V, ID will be A) IDSS B) 1/4 IDSS C) 1/2 IDSS D) 3/4 IDSS 9) To determine the dc power dissipated within a JFET, multiply A) (ID)2 by RDS(on) B) (ID)2 by RIN C) ID by RDS(on) D) ID by RIN 10) An advantage of a JFET over a BJT is that the JFET has A) higher gain B) higher input resistance C) better linearity D) all of the above

          TRUE/FALSE. Write 'T' if the statement is true and 'F' if the statement is false.
1) For normal operation, the gate-source junction of a JFET is reverse-biased.
2) The maximum drain current in a JFET is IDSS, which occurs at VGS = 0 V.
3) The transconductance curve has the same shape as the transfer curve.
4) JFETs and MOSFETs are often referred to as square-law devices.
5) The input structure of a MOSFET is a reverse-biased diode.
6) Dual-gate MOSFETs can be either depletion or enhancement devices.
7) All MOSFETs are subject to damage from electrostatic discharge.

MULTIPLE CHOICE. Choose the one alternative that best completes the statement or answers the question.
8) Assume an n-channel JFET has a VGS(off) of -8 V. If VGS = -4 V, ID will be
A) IDSS B) 1/4 IDSS C) 1/2 IDSS D) 3/4 IDSS

9) To determine the dc power dissipated within a JFET, multiply
A) (ID)2 by RDS(on) B) (ID)2 by RIN
C) ID by RDS(on) D) ID by RIN

10) An advantage of a JFET over a BJT is that the JFET has
A) higher gain B) higher input resistance
C) better linearity D) all of the above

TRUE/FALSE. Write 'T' if the statement is true and 'F' if the statement is false.
1) For normal operation, the gate-source junction of a JFET is reverse-biased.
2) The maximum drain current in a JFET is IDSS, which occurs at VGS = 0 V.
3) The transconductance curve has the same shape as the transfer curve.
4) JFETs and MOSFETs are often referred to as square-law devices.
5) The input structure of a MOSFET is a reverse-biased diode.
6) Dual-gate MOSFETs can be either depletion or enhancement devices.
7) All MOSFETs are subject to damage from electrostatic discharge.

MULTIPLE CHOICE. Choose the one alternative that best completes the statement or answers the question.
8) Assume an n-channel JFET has a VGS(off) of -8 V. If VGS = -4 V, ID will be
A) IDSS B) 1/4 IDSS C) 1/2 IDSS D) 3/4 IDSS

9) To determine the dc power dissipated within a JFET, multiply
A) (ID)2 by RDS(on) B) (ID)2 by RIN
C) ID by RDS(on) D) ID by RIN

10) An advantage of a JFET over a BJT is that the JFET has
A) higher gain B) higher input resistance
C) better linearity D) all of the above

Added by Timothy B.

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