Question

(b) Some contamination of indium (In) occurred during the CVD synthesis that resulted in the formation of bulk InxGa1-xAs with an absorption threshold at 970 nm. Analysis by X-ray photoelectron spectroscopy (XPS) found x = 0.1. What size of InxGa1-xAs should be fabricated to achieve the target absorption threshold of 700 nm? The effective mass of the electron = 0.041 me, and the effective mass of the hole = 0.21 me. The dielectric constant of In0.1Ga0.9As is 15.4.

Name: b some contamination of indium in occurred during the cvd synthesis that resulted in the formation of bulk inxga1 xas with absorption threshold at 970 nm analysis by x ray photoelectron spec 06724
Uploaded: 2023-07-24T08:22:38-08:00
Duration: 15 s
Channel: Numerade
Description: b some contamination of indium in occurred during the cvd synthesis that resulted in the formation of bulk inxga1 xas with absorption threshold at 970 nm analysis by x ray photoelectron spec 06724

          (b) Some contamination of indium (In) occurred during the CVD synthesis that resulted in the formation of bulk InxGa1-xAs with an absorption threshold at 970 nm. Analysis by X-ray photoelectron spectroscopy (XPS) found x = 0.1. What size of InxGa1-xAs should be fabricated to achieve the target absorption threshold of 700 nm? The effective mass of the electron = 0.041 me, and the effective mass of the hole = 0.21 me. The dielectric constant of In0.1Ga0.9As is 15.4.

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University Physics with Modern Physics

Hugh D. Young 14th Edition

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Solved by Expert Adi S

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1Ga0.9As with an absorption threshold of 970 nm. We can use the following formula: Eg = hc/λ - αhν where Eg is the bandgap energy, h is Planck's constant, c is the speed of light, λ is the wavelength of light, α is the absorption coefficient, and ν is the Show more…

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(b) Some contamination of indium (In) occurred during the CVD synthesis that resulted in the formation of bulk InxGa1-xAs with an absorption threshold at 970 nm. Analysis by X-ray photoelectron spectroscopy (XPS) found x = 0.1. What size of InxGa1-xAs should be fabricated to achieve the target absorption threshold of 700 nm? The effective mass of the electron = 0.041 me, and the effective mass of the hole = 0.21 me. The dielectric constant of In0.1Ga0.9As is 15.4.