Estimate the ratio of the number of electrons in the conduction band of germanium over the equivalent number for silicon at room temperature (293K). The energy gaps are 0.67 eV for germanium and 1.1 eV for silicon. Assume the Fermi energy is at the center of the gap.
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To do this, we can use the formula: n = 2 * (2π * m * k * T / h^2)^(3/2) * exp(-(E - Ef) / (k * T)) where: - n is the number of electrons in the conduction band - m is the effective mass of the electron - k is Boltzmann's constant (8.617333262145 x 10^-5 eV/K) - Show more…
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Estimate the ratio of the number of electrons in the conduction bands of germanium $\left(E_{g}=0.66 \mathrm{eV}\right)$ and silicon $\left(E_{g}=1.12 \mathrm{eV}\right)$ at a temperature of $400 \mathrm{K}$. Assume that the Fermi energy is at the center of the gap.
Estimate the ratio of the number of electrons in the conduction bands of germanium $\left(E_{\mathrm{g}}=0.66 \mathrm{eV}\right)$ and silicon $\left(E_{\mathrm{g}}=1.12 \mathrm{eV}\right)$ at a temperature of $400 \mathrm{~K}$. Assume the Fermi energy is at the center of the gap.
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