Question 5 pn junction a explain the main physical...

Name: question 5 pn junction a explain the main physical principles underlying the operation of a pn junction based diode b provide a rigorous derivation of the net current through the pn junction 24227
Uploaded: 2023-07-27T10:36:58-08:00
Duration: 8 min 36 s
Channel: Sri K
Description: question 5 pn junction a explain the main physical principles underlying the operation of a pn junction based diode b provide a rigorous derivation of the net current through the pn junction 24227

Question 5: PN Junction (a) Explain the main physical principles underlying the operation of a PN-junction-based diode. (b) Provide a rigorous derivation of the net current through the PN-junction for both the forward and reverse bias. Explain and justify every step in your derivation. (c) For a fixed temperature, plot the net current as a function of applied voltage.

Transcript

0:00 This question.

00:01 So, in the first part, a p -n junction, a p -n junction, junction -based diode is a semiconductor, is a semiconductor represented by s dot c, semiconductor device formed by joining, formed by joining two different types, two different types of semiconductors, that is namely it is p -type semiconductor and p -type semiconductor and second one is n -type semiconductor.

00:54 The p -n junction is a crucial component in various, the p -n junction, the p -n junction is a crucial, crucial component in various electronic device, in various electronic, electronic devices.

01:30 So, the main physical principle and principles underlying the operation of the p -n junction are, first one is majority and minority charge carriers, majority and minority, minority carriers.

01:50 So, in n -type of semiconductor, in n -type, majority charge carriers are electrons and minority will be positively charged, that is holes and in n -type and in p -type, in p -type, the majority charge carriers are holes, these are majority charge carriers, majority charge carriers and here also this is majority charge carriers.

02:25 Now, another thing is formation of depletion region, formation of, of depletion, depletion region.

02:40 So, it is formed when, when n -type and p -type semiconductor are brought together.

02:46 Electrons from n -type, electrons from n -type diffuse, diffuse to the, to the p -side, okay and holes and holes from the p -side diffuse to n -side.

03:10 The movement of charge carriers lead to the formation of depletion region.

03:15 Now, the third thing is barrier potential.

03:20 So, third is barrier potential, barrier potential.

03:29 So, as the charge carrier diffuse across the junction, they create an electric field that opposes further carrier movement and the third is forward bias, forward bias.

03:43 When the, when a positive voltage is applied to p -side and the negative voltage to the n -side, it is forward bias and the reverse goes to the reverse bias.

03:55 That is the, the positive side, positive potential of the battery is connected to the negative of the n, n -side of the p -n junction.

04:08 Now, moving forward, we have to derive the current for forward bias as well as for reverse bias.

04:15 So, for, firstly for forward bias, the total current will be i drift plus i diffusion...

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