Question

2. You are given an unbiased Schottky diode at 300K for an ideal Schottky barrier formed between platinum\\ ($\phi$ = 5.3 eV) and silicon doped with $N_d$ = 1 × 10$^{16}$/cm$^3$. The area of the diode is 10$^{-5}$ cm$^2$,\\ $\epsilon_s$ = 11.9$\epsilon_0$, $\chi_s$ = 4 eV and $E_g$ = 1.1 eV. Note that $k_bT$ = 0.0259 eV.\\ Calculate the capacitance of the Schottky diode (assume charge on metal is infinite) in F.\\ Do not enter units, just the number (2 sig figs).\\ Make sure your answer is in the format xey, where x is numerical answer, y is power and e represents 10$^\wedge$ (ten\\ raised to the power of).

          2. You are given an unbiased Schottky diode at 300K for an ideal Schottky barrier formed between platinum\\
($\phi$ = 5.3 eV) and silicon doped with $N_d$ = 1 × 10$^{16}$/cm$^3$. The area of the diode is 10$^{-5}$ cm$^2$,\\
$\epsilon_s$ = 11.9$\epsilon_0$, $\chi_s$ = 4 eV and $E_g$ = 1.1 eV. Note that $k_bT$ = 0.0259 eV.\\
Calculate the capacitance of the Schottky diode (assume charge on metal is infinite) in F.\\
Do not enter units, just the number (2 sig figs).\\
Make sure your answer is in the format xey, where x is numerical answer, y is power and e represents 10$^\wedge$ (ten\\
raised to the power of).

2. You are given an unbiased Schottky diode at 300K for an ideal Schottky barrier formed between platinum

(ϕ = 5.3 eV) and silicon doped with Nd = 1 × 10^16/cm^3. The area of the diode is 10^-5 cm^2,

= 11.9ϵ0, = 4 eV and Eg = 1.1 eV. Note that kbT = 0.0259 eV.

Calculate the capacitance of the Schottky diode (assume charge on metal is infinite) in F.

Do not enter units, just the number (2 sig figs).

Make sure your answer is in the format xey, where x is numerical answer, y is power and e represents 10^∧ (ten

raised to the power of).

Added by Jorge D.

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