A silicon chip of thickness $L=2.5 \mathrm{~mm}$ and thermal conductivity $k_{s}=135 \mathrm{~W} / \mathrm{m} \cdot \mathrm{K}$ is cooled by boiling a saturated fluorocarbon liquid $\left(T_{\text {sat }}=57^{\circ} \mathrm{C}\right)$ on its surface. The electronic circuits on the bottom of the chip produce a uniform heat flux of $q_{o}^{\prime \prime}=5 \times 10^{4} \mathrm{~W} / \mathrm{m}^{2}$, while the sides of the chip are perfectly insulated.
Properties of the saturated fluorocarbon are $c_{p, l}=$ $1100 \mathrm{~J} / \mathrm{kg} \cdot \mathrm{K}, h_{f g}=84,400 \mathrm{~J} / \mathrm{kg}, \rho_{l}=1619.2 \mathrm{~kg} / \mathrm{m}^{3}$, $\rho_{v}=13.4 \mathrm{~kg} / \mathrm{m}^{3}, \sigma=8.1 \times 10^{-3} \mathrm{~N} / \mathrm{m}, \mu_{1}=440 \times 10^{-6}$ $\mathrm{kg} / \mathrm{m} \cdot \mathrm{s}$, and $P r_{I}=9.01$. In addition, the nucleate boiling constants are $C_{s, f}=0.005$ and $n=1.7$.
(a) What is the steady-state temperature $T_{o}$ at the bottom of the chip? If, during testing of the chip, $q_{o}^{\prime \prime}$ is increased to $90 \%$ of the critical heat flux, what is the new steady-state value of $T_{o}$ ?
(b) Compute and plot the chip surface temperatures (top and bottom) as a function of heat flux for $0.20 \leq q_{o}^{\prime \prime} / q_{\max }^{\prime \prime} \leq 0.90$. If the maximum allowable chip temperature is $80^{\circ} \mathrm{C}$, what is the maximum allowable value of $q_{e}^{\text {"? }}$ ?