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Materials Science and Engineering. An Introduction

William D. Callister

Chapter 18

Electrical Properties - all with Video Answers

Educators


Chapter Questions

02:49

Problem 1

(a) Compute the electrical conductivity of a $7.0-\mathrm{mm}(0.28-\mathrm{in}$.) diameter cylindrical silicon specimen 57 mm ( 2.25 in .) long in which a current of 0.25 A passes in an axial direction. A voltage of 24 V is measured across two probes that are separated by 45 mm ( 1.75 in.$)$.
(b) Compute the resistance over the entire $57 \mathrm{~mm}(2.25 \mathrm{in}$.) of the specimen.

Mohammad Mehran
Mohammad Mehran
Numerade Educator
01:11

Problem 2

An aluminum wire 10 m long must experience a voltage drop of less than 1.0 V when a current of 5 A passes through it. Using the data in Table 18.1, compute the minimum diameter of the wire.

Narayan Hari
Narayan Hari
Numerade Educator
03:02

Problem 3

A plain carbon steel wire 3 mm in diameter is to offer a resistance of no more than $20 \Omega$. Using the data in Table 18.1, compute the maximum wire length.

Hunza Gilgit
Hunza Gilgit
Numerade Educator
01:22

Problem 4

Demonstrate that the two Ohm's law expressions, Equations 18.1 and 18.5, are equivalent.

Narayan Hari
Narayan Hari
Numerade Educator
01:42

Problem 5

(a) Using the data in Table 18.1, compute the resistance of an aluminum wire 5 mm ( 0.20 in .) in diameter and 5 m ( 200 in .) long.
(b) What would be the current flow if the potential drop across the ends of the wire is 0.04 V ? (c) What is the current density?
(d) What is the magnitude of the electric field across the ends of the wire?

Narayan Hari
Narayan Hari
Numerade Educator
01:04

Problem 6

What is the distinction between electronic and ionic conduction?

Hunza Gilgit
Hunza Gilgit
Numerade Educator
03:45

Problem 7

How does the electron structure of an isolated atom differ from that of a solid material?

Mohammad Mehran
Mohammad Mehran
Numerade Educator
02:37

Problem 8

In terms of electron energy band structure, discuss reasons for the difference in electrical conductivity between metals, semiconductors, and insulators.

Ameer Said
Ameer Said
Numerade Educator
01:09

Problem 9

Briefly tell what is meant by the drift velocity and mobility of a free electron.

Hunza Gilgit
Hunza Gilgit
Numerade Educator
02:49

Problem 10

(a) Calculate the drift velocity of electrons in silicon at room temperature and when the magnitude of the electric field is $500 \mathrm{~V} / \mathrm{m}$.
(b) Under these circumstances, how long does it take an electron to traverse a $25-\mathrm{mm}$ (1-in.) length of crystal?

Mohammad Mehran
Mohammad Mehran
Numerade Educator
03:45

Problem 11

At room temperature the electrical conductivity and the electron mobility for aluminum are $3.8 \times 10^7(\Omega-\mathrm{m})^{-1}$ and $0.0012 \mathrm{~m}^2 / \mathrm{V}$-s, respectively. (a) Compute the number of free electrons per cubic meter for aluminum at room temperature. (b) What is the number of free electrons per aluminum atom? Assume a density of $2.7 \mathrm{~g} / \mathrm{cm}^3$.

Mohammad Mehran
Mohammad Mehran
Numerade Educator
02:23

Problem 12

(a) Calculate the number of free electrons per cubic meter for silver, assuming that there are 1.3 free electrons per silver atom. The electrical conductivity and density for Ag are $6.8 \times 10^7(\Omega-\mathrm{m})^{-1}$ and $10.5 \mathrm{~g} / \mathrm{cm}^3$, respectively. (b) Now compute the electron mobility for Ag .
ctrical Resistivity of Metals

Mohammad Mehran
Mohammad Mehran
Numerade Educator
03:37

Problem 13

From Figure 18.37, estimate the value of $A$ in Equation 18.11 for zinc as an impurity in copper-zinc alloys.

Ameer Said
Ameer Said
Numerade Educator
07:05

Problem 14

(a) Using the data in Figure 18.8, determine the values of $\rho_0$ and $a$ from Equation 18.10 for pure copper. Take the temperature $T$ to be in degrees Celsius. (b) Determine the value of $A$ in Equation 18.11 for nickel as an impurity in copper, using the data in Figure 18.8. (c) Using the results of parts (a) and (b), estimate the electrical resistivity of copper containing $2.50 \mathrm{at} \% \mathrm{Ni}$ at $120^{\circ} \mathrm{C}$.

Ameer Said
Ameer Said
Numerade Educator
02:09

Problem 15

Determine the electrical conductivity of a $\mathrm{Cu}-\mathrm{Ni}$ alloy that has a tensile strength of $275 \mathrm{MPa}(40,000 \mathrm{psi}$ ). You will find Figure 7.16 helpful.

Hunza Gilgit
Hunza Gilgit
Numerade Educator
04:31

Problem 16

Tin bronze has a composition of $89 \mathrm{wt} \% \mathrm{Cu}$ and $11 \mathrm{wt} \% \mathrm{Sn}$, and consists of two phases at room temperature: an $\alpha$ phase, which is copper containing a very small amount of tin in solid solution, and an $\epsilon$ phase, which consists of approximately $37 \mathrm{wt} \%$ Sn. Compute the room temperature conductivity of this alloy given the following data:
$$
\begin{array}{ccc}
\hline \text { Phase } & \begin{array}{c}
\text { Electrical } \\
\text { Resistivity } \\
(\boldsymbol{\Omega}-\mathrm{m})
\end{array} & \begin{array}{c}
\text { Density } \\
\left(\mathrm{g} / \mathbf{c m}^{\mathbf{3}}\right)
\end{array} \\
\hline \alpha & 1.88 \times 10^{-8} & 8.94 \\
\epsilon & 5.32 \times 10^{-7} & 8.25 \\
\hline
\end{array}
$$

Ameer Said
Ameer Said
Numerade Educator
01:23

Problem 17

A cylindrical metal wire $3 \mathrm{~mm}(0.12 \mathrm{in}$.) in diameter is required to carry a current of 12 A with a minimum of 0.01 V drop per foot $(300 \mathrm{~mm})$ of wire. Which of the metals and alloys listed in Table 18.1 are possible candidates?

Narayan Hari
Narayan Hari
Numerade Educator
03:17

Problem 18

(a) Using the data presented in Figure 18.16, determine the number of free electrons per atom for intrinsic germanium and silicon at room temperature ( 298 K ). The densities for Ge and Si are 5.32 and $2.33 \mathrm{~g} / \mathrm{cm}^3$, respectively.
(b) Now explain the difference in these freeelectron-per-atom values.

Narayan Hari
Narayan Hari
Numerade Educator
05:41

Problem 19

For intrinsic semiconductors, the intrinsic carrier concentration $n_i$ depends on temperature as follows:

$$
n_i \propto \exp \left(-\frac{E_g}{2 k T}\right)
$$

or taking natural logarithms,

$$
\ln n_i \propto-\frac{E_g}{2 k T}
$$

Thus, a plot of $\ln n_i$ versus $1 / T(\mathrm{~K})^{-1}$ should be linear and yield a slope of $-E_g / 2 k$. Using this information and the data presented in Figure 18.16, determine the band gap energies for silicon and germanium, and compare these values with those given in Table 18.3.

Ameer Said
Ameer Said
Numerade Educator
01:04

Problem 20

Briefly explain the presence of the factor 2 in the denominator of Equation 18.35a.

Hunza Gilgit
Hunza Gilgit
Numerade Educator
02:55

Problem 21

At room temperature the electrical conductivity of PbS is $25(\Omega-\mathrm{m})^{-1}$, whereas the electron and hole mobilities are 0.06 and $0.02 \mathrm{~m}^2 / \mathrm{V}$-s, respectively. Compute the intrinsic carrier concentration for PbS at room temperature.

Hunza Gilgit
Hunza Gilgit
Numerade Educator
01:14

Problem 22

Is it possible for compound semiconductors to exhibit intrinsic behavior? Explain your answer.

Hunza Gilgit
Hunza Gilgit
Numerade Educator
04:12

Problem 23

For each of the following pairs of semiconductors, decide which will have the smaller band gap energy, $E_g$, and then cite the reason for your choice. (a) C (diamond) and Ge , (b) AlP and InSb , (c) GaAs and ZnSe , (d) ZnSe and CdTe , and (e) CdS and NaCl .

Ameer Said
Ameer Said
Numerade Educator
07:58

Problem 24

Define the following terms as they pertain to semiconducting materials: intrinsic, extrinsic, compound, elemental. Now provide an example of each.

Mohammad Mehran
Mohammad Mehran
Numerade Educator
03:11

Problem 25

An $n$-type semiconductor is known to have an electron concentration of $5 \times 10^{17} \mathrm{~m}^{-3}$. If the electron drift velocity is $350 \mathrm{~m} / \mathrm{s}$ in an electric field of $1000 \mathrm{~V} / \mathrm{m}$, calculate the conductivity of this material.

Hunza Gilgit
Hunza Gilgit
Numerade Educator
07:03

Problem 26

(a) In your own words, explain how donor impurities in semiconductors give rise to free electrons in numbers in excess of those generated by valence band-conduction band excitations. (b) Also explain how acceptor impurities give rise to holes in numbers in excess of those generated by valence bandconduction band excitations.

Khoobchandra Agrawal
Khoobchandra Agrawal
Numerade Educator
01:50

Problem 27

(a) Explain why no hole is generated by the electron excitation involving a donor impurity atom. (b) Explain why no free electron is generated by the electron excitation involving an acceptor impurity atom.

Hunza Gilgit
Hunza Gilgit
Numerade Educator
04:37

Problem 28

Will each of the following elements act as a donor or an acceptor when added to the indicated semiconducting material? Assume that the impurity elements are substitutional.
$$
\begin{array}{lc}
\hline \text { Impurity } & \text { Semiconductor } \\
\hline \mathrm{N} & \mathrm{Si} \\
\mathrm{B} & \mathrm{Ge} \\
\mathrm{S} & \mathrm{InSb} \\
\mathrm{In} & \mathrm{CdS} \\
\mathrm{As} & \mathrm{ZnTe} \\
\hline
\end{array}
$$

Ameer Said
Ameer Said
Numerade Educator
01:33

Problem 29

(a) The room-temperature electrical conductivity of a silicon specimen is $500(\Omega-\mathrm{m})^{-1}$. The hole concentration is known to be $2.0 \times 10^{22} \mathrm{~m}^{-3}$. Using the electron and hole mobilities for silicon in Table 18.3, compute the electron concentration. (b) On the basis of the result in part (a), is the specimen intrinsic, n-type extrinsic, or p-type extrinsic? Why?

Narayan Hari
Narayan Hari
Numerade Educator
01:30

Problem 30

Germanium to which $10^{24} \mathrm{~m}^{-3}$ As atoms have been added is an extrinsic semiconductor at room temperature, and virtually all the As atoms may be thought of as being ionized (i.e., one charge carrier exists for each As atom). (a) Is this material $n$-type or $p$-type?
(b) Calculate the electrical conductivity of this material, assuming electron and hole mobilities of 0.1 and $0.05 \mathrm{~m}^2 / \mathrm{V}$-s, respectively.

Narayan Hari
Narayan Hari
Numerade Educator
03:38

Problem 31

The following electrical characteristics have been determined for both intrinsic and p-type extrinsic gallium antimonide (GaSb) at room temperature:
$$
\begin{aligned}
&\begin{array}{lccc}
\hline & \boldsymbol{\sigma}(\boldsymbol{\Omega}-\boldsymbol{m})^{-1} & \boldsymbol{n}\left(\boldsymbol{m}^{-3}\right) & \boldsymbol{p}\left(\boldsymbol{m}^{-3}\right) \\
\hline \text { Intrinsic } & 8.9 \times 10^4 & 8.7 \times 10^{23} & 8.7 \times 10^{23} \\
\text { Extrinsic } & 2.3 \times 10^5 & 7.6 \times 10^{22} & 1.0 \times 10^{25} \\
\quad(p \text {-type }) & & & \\
\hline
\end{array}\\
&\text { Calculate electron and hole mobilities. }
\end{aligned}
$$

Ameer Said
Ameer Said
Numerade Educator
02:15

Problem 32

Calculate the conductivity of intrinsic silicon at $80^{\circ} \mathrm{C}$.

Supratim Pal
Supratim Pal
Numerade Educator
03:31

Problem 33

At temperatures near room temperature, the temperature dependence of the conductivity for intrinsic germanium is found to equal

$$
\sigma=C T^{-3 / 2} \exp \left(-\frac{E_g}{2 k T}\right)
$$

where $C$ is a temperature-independent constant and $T$ is in Kelvins. Using Equation 18.36, calculate the intrinsic electrical conductivity of germanium at $175^{\circ} \mathrm{C}$.

Mohammad Mehran
Mohammad Mehran
Numerade Educator
01:30

Problem 34

Using Equation 18.36 and the results of Problem 18.33, determine the temperature at which the electrical conductivity of intrinsic germanium is $40(\Omega-\mathrm{m})^{-1}$.

Narayan Hari
Narayan Hari
Numerade Educator
02:26

Problem 35

Estimate the temperature at which GaAs has an electrical conductivity of $1.6 \times 10^{-3}$ $(\Omega-\mathrm{m})^{-1}$ assuming the temperature dependence for $\sigma$ of Equation 18.36. The data shown in Table 18.3 might prove helpful.

Narayan Hari
Narayan Hari
Numerade Educator
02:59

Problem 36

Compare the temperature dependence of the conductivity for metals and intrinsic semiconductors. Briefly explain the difference in behavior.

Ameer Said
Ameer Said
Numerade Educator
01:01

Problem 37

Calculate the room-temperature electrical conductivity of silicon that has been doped with $10^{23} \mathrm{~m}^{-3}$ of arsenic atoms.

Narayan Hari
Narayan Hari
Numerade Educator
02:22

Problem 38

Calculate the room-temperature electrical conductivity of silicon that has been doped with $2 \times 10^{24} \mathrm{~m}^{-3}$ of boron atoms.

Hunza Gilgit
Hunza Gilgit
Numerade Educator
01:01

Problem 39

Estimate the electrical conductivity, at $75^{\circ} \mathrm{C}$, of silicon that has been doped with $10^{22} \mathrm{~m}^{-3}$ of phosphorus atoms.

Narayan Hari
Narayan Hari
Numerade Educator
02:31

Problem 40

Estimate the electrical conductivity, at $135^{\circ} \mathrm{C}$, of silicon that has been doped with $10^{24} \mathrm{~m}^{-3}$ of aluminum atoms.
e Hall Effect

Mohammad Mehran
Mohammad Mehran
Numerade Educator
01:55

Problem 41

Some hypothetical metal is known to have an electrical resistivity of $3.3 \times 10^{-8}(\Omega$-m). Through a specimen of this metal 15 mm thick is passed a current of 25 A ; when a magnetic field of 0.95 tesla is simultaneously imposed in a direction perpendicular to that of the current, a Hall voltage of $-2.4 \times 10^{-7} \mathrm{~V}$ is measured. Compute (a) the electron mobility for this metal, and (b) the number of free electrons per cubic meter.

Narayan Hari
Narayan Hari
Numerade Educator
01:10

Problem 42

Some metal alloy is known to have electrical conductivity and electron mobility values of $1.2 \times 10^7(\Omega-\mathrm{m})^{-1}$ and $0.0050 \mathrm{~m}^2 / \mathrm{V}$-s, respectively. Through a specimen of this alloy that is 35 mm thick is passed a current of 40 A . What magnetic field would need to be imposed to yield a Hall voltage of $-3.5 \times 10^{-7} \mathrm{~V}$ ?
miconducting Devices

Narayan Hari
Narayan Hari
Numerade Educator
04:30

Problem 43

Briefly describe electron and hole motions in a $p-n$ junction for forward and reverse biases; then explain how these lead to rectification.

Khoobchandra Agrawal
Khoobchandra Agrawal
Numerade Educator
00:51

Problem 44

How is the energy in the reaction described by Equation 18.21 dissipated?

Hunza Gilgit
Hunza Gilgit
Numerade Educator
00:47

Problem 45

What are the two functions that a transistor may perform in an electronic circuit?

Hunza Gilgit
Hunza Gilgit
Numerade Educator
05:13

Problem 46

Cite the differences in operation and application for junction transistors and MOSFETs.

Khoobchandra Agrawal
Khoobchandra Agrawal
Numerade Educator
02:25

Problem 47

We noted in Section 12.5 (Figure 12.22) that in FeO (wüstite), the iron ions can exist in both $\mathrm{Fe}^{2+}$ and $\mathrm{Fe}^{3+}$ states. The number of each of these ion types depends on temperature and the ambient oxygen pressure. Furthermore, we also noted that in order to retain electroneutrality, one $\mathrm{Fe}^{2+}$ vacancy will be created for every two $\mathrm{Fe}^{3+}$ ions that are formed; consequently, in order to reflect the existence of these vacancies the formula for wüstite is often represented as $\mathrm{Fe}_{(1-x)} \mathrm{O}$ where $x$ is some small fraction less than unity.

In this nonstoichiometric $\mathrm{Fe}_{(1-x)} \mathrm{O}$ material, conduction is electronic, and, in fact, it behaves as a $p$-type semiconductor. That is, the $\mathrm{Fe}^{3+}$ ions act as electron acceptors, and it is relatively easy to excite an electron from the valence band into an $\mathrm{Fe}^{3+}$ acceptor state, with the formation of a hole. Determine the electrical conductivity of a specimen of wüstite that has a hole mobility of $1.0 \times 10^{-5} \mathrm{~m}^2 / \mathrm{V}$-s and for which the value of $x$ is 0.040 . Assume that the acceptor states are saturated (i.e., one hole exists for every $\mathrm{Fe}^{3+}$ ion). Wüstite has the sodium chloride crystal structure with a unit cell edge length of 0.437 nm .

Ameer Said
Ameer Said
Numerade Educator
01:29

Problem 48

At temperatures between $540^{\circ} \mathrm{C}(813 \mathrm{~K})$ and $727^{\circ} \mathrm{C}(1000 \mathrm{~K})$, the activation energy and preexponential for the diffusion coefficient of $\mathrm{Na}^{+}$in NaCl are $173,000 \mathrm{~J} / \mathrm{mol}$ and $4.0 \times 10^{-4} \mathrm{~m}^2 / \mathrm{s}$, respectively. Compute the mobility for an $\mathrm{Na}^{+}$ion at $600^{\circ} \mathrm{C}(873 \mathrm{~K})$.

Narayan Hari
Narayan Hari
Numerade Educator
01:02

Problem 49

A parallel-plate capacitor using a dielectric material having an $\epsilon_r$ of 2.2 has a plate spacing of $2 \mathrm{~mm}(0.08 \mathrm{in}$.). If another material having a dielectric constant of 3.7 is used and the capacitance is to be unchanged, what must be the new spacing between the plates?

Narayan Hari
Narayan Hari
Numerade Educator
02:18

Problem 50

A parallel-plate capacitor with dimensions of 38 mm by 65 mm ( $1 \frac{1}{2} \mathrm{in}$. by $2 \frac{1}{2} \mathrm{in}$.) and a plate separation of $1.3 \mathrm{~mm}(0.05 \mathrm{in}$.$) must$ have a minimum capacitance of 70 pF $\left(7 \times 10^{-11} \mathrm{~F}\right)$ when an ac potential of 1000 V is applied at a frequency of 1 MHz . Which of the materials listed in Table 18.5 are possible candidates? Why?

Mohammad Mehran
Mohammad Mehran
Numerade Educator
01:15

Problem 51

Consider a parallel-plate capacitor having an area of $3225 \mathrm{~mm}^2\left(5 \mathrm{in}^2\right)$, a plate separation of $1 \mathrm{~mm}(0.04 \mathrm{in}$.$) , and with a material having$ a dielectric constant of 3.5 positioned between the plates. (a) What is the capacitance of this capacitor? (b) Compute the electric field that must be applied for $2 \times 10^{-8} \mathrm{C}$ to be stored on each plate.

Narayan Hari
Narayan Hari
Numerade Educator
02:03

Problem 52

In your own words, explain the mechanism by which charge storing capacity is increased by the insertion of a dielectric material within the plates of a capacitor.

Khoobchandra Agrawal
Khoobchandra Agrawal
Numerade Educator
02:56

Problem 53

For CaO , the ionic radii for $\mathrm{Ca}^{2+}$ and $\mathrm{O}^{2-}$ ions are 0.100 and 0.140 nm , respectively. If an externally applied electric field produces a $5 \%$ expansion of the lattice, compute the dipole moment for each $\mathrm{Ca}^{2+}-\mathrm{O}^{2-}$ pair. Assume that this material is completely unpolarized in the absence of an electric field.

Mohammad Mehran
Mohammad Mehran
Numerade Educator
01:01

Problem 54

The polarization $P$ of a dielectric material positioned within a parallel-plate capacitor is to be $4.0 \times 10^{-6} \mathrm{C} / \mathrm{m}^2$.
(a) What must be the dielectric constant if an electric field of $10^5 \mathrm{~V} / \mathrm{m}$ is applied?
(b) What will be the dielectric displacement $D$ ?

Narayan Hari
Narayan Hari
Numerade Educator
09:17

Problem 55

A charge of $2.0 \times 10^{-10} \mathrm{C}$ is to be stored on each plate of a parallel-plate capacitor having an area of $\left.650 \mathrm{~mm}^2\left(1.0 \mathrm{in}^2\right)^2\right)$ and a plate separation of 4.0 mm ( 0.16 in .).
(a) What voltage is required if a material having a dielectric constant of 3.5 is positioned within the plates?
(b) What voltage would be required if a vacuum were used?
(c) What are the capacitances for parts
(a) and (b)?
(d) Compute the dielectric displacement for part (a).
(e) Compute the polarization for part (a).

Mohammad Mehran
Mohammad Mehran
Numerade Educator
02:31

Problem 56

(a) For each of the three types of polarization, briefly describe the mechanism by which dipoles are induced and/or oriented by the action of an applied electric field. (b) For gaseous argon, solid LiF , liquid $\mathrm{H}_2 \mathrm{O}$, and solid Si , what kind(s) of polarization is (are) possible? Why?

Ameer Said
Ameer Said
Numerade Educator
01:46

Problem 57

(a) Compute the magnitude of the dipole moment associated with each unit cell of $\mathrm{BaTiO}_3$, as illustrated in Figure 18.35.
(b) Compute the maximum polarization that is possible for this material.

Narayan Hari
Narayan Hari
Numerade Educator
01:01

Problem 58

The dielectric constant for a soda-lime glass measured at very high frequencies (on the order of $10^{15} \mathrm{~Hz}$ ) is approximately 2.3 . What fraction of the dielectric constant at relatively low frequencies ( 1 MHz ) is attributed to ionic polarization? Neglect any orientation polarization contributions.

Narayan Hari
Narayan Hari
Numerade Educator
01:45

Problem 59

Briefly explain why the ferroelectric behavior of $\mathrm{BaTiO}_3$ ceases above its ferroelectric Curie temperature.

Hunza Gilgit
Hunza Gilgit
Numerade Educator