Chapter Questions
For the fixed-bias configuration of Fig. $75:$a. Sketch the transfer characteristics of the device.b. Superimpose the network equation on the same graph.c. Determine $I_{D_{Q}}$ and $V_{D S_{O}}$d. Using Shockley's equation, solve for $I_{D_{Q}}$ and then find $V_{D S_{O}}$. Compare with the solutions of part (c).
For the fixed-bias configuration of Fig. 76 , determine:a. $I_{D_{0}}$ and $V_{G S_{Q}}$ using a purely mathematical approach.b. Repeat part (a) using a graphical approach and compare results.c. Find $V_{p s}, V_{D}, V_{G}$, and $V_{S}$ using the results of part (a).
Given the measured value of $V_{D}$ in Fig. 77 , determine:a. $I_{D}$.b. $V_{D S}$c. $V_{G G}$
Determine $V_{D}$ and $V_{G S}$ for the fixed-bias configuration of Fig. 78 .
Determine $V_{D}$ and $V_{G S}$ for the fixed-bias configuration of Fig. $79 .$
Determine $V_{D}$ and $V_{G S}$ for the fixed-bias configuration of Fig. 79 .
For the self-bias configuration of Fig. 80 :a. Sketch the transfer curve for the device.b. Superimpose the network equation on the same graph.c. Determine $I_{D_{Q}}$ and $V_{G S_{0}}$d. Calculate $V_{D S}, V_{D}, V_{G}$, and $V_{S}$
Determine $I_{D_{Q}}$ for the network of Fig. 80 using a purely mathematical approach. That is, establish a quadratic equation for $I_{D}$ and choose the solution compatible with the network characteristics. Compare to the solution obtained in Problem 6 .
For the network of Fig. 81, determine:a. $V_{G S_{Q}}$ and $I_{D_{0}}$.b. $V_{D S}, V_{D}, V_{G}$, and $V_{S}$.
Given the measurement $V_{S}=1.7 \mathrm{~V}$ for the network of Fig. 82 , determine:a. $I_{D_{0}}$b. $V_{G S_{Q}}$c. $I_{D S S}$.d. $V_{D-}$e. $V_{D S}$.
For the network of Fig. 83 , determine:a. $I_{D}$.b. $V_{D S}$c. $V_{D}$.d. $V_{S}$.
Find $V_{S}$ for the network of Fig. $84 .$
For the network of Fig. 85, determine:a. $V_{G}$ -b. $I_{D_{Q}}$ and $V_{G S_{0}}$.c. $V_{D}$ and $V_{S}$.d. $V_{D S_{0}}$.
a. Repeat Problem 12 with $R_{S}=0.51 \mathrm{k} \Omega$ (about $50 \%$ of the value of that of Problem 12 ). What is the effect of a smaller $R_{S}$ on $I_{D_{0}}$ and $V_{G S_{0}}$ ?b. What is the minimum possible value of $R_{5}$ for the network of Fig. 85 ?
For the network of Fig. $86, V_{D}=12 \mathrm{~V}$. Determine:a. $I_{D}$b. $V_{S}$ and $V_{D S}$.c. $V_{G}$ and $V_{G S}$.d. $V_{P}$.
Determine the value of $R_{S}$ for the network of Fig. 87 to establish $V_{D}=10 \mathrm{~V}$.
For the network of Fig. 88 , determine:a. $I_{D_{Q}}$ and $V_{G S_{0} \text { . }}$b. $V_{D S}$ and $V_{S}$.
Given $V_{D S}=4 \mathrm{~V}$ for the network of Fig. 89, determine:a. $I_{D}$.b. $V_{D}$ and $V_{S}$.c. $V_{G S}$
For the network of Fig. $90 .$a. Find $I_{D_{0}}$.b. Determine $V_{D_{Q}}$ and $V_{D S_{0}^{-}}$c. Find the power supplied by the source and dissipated by the device.
Determine $V_{D}$ and $V_{G S}$ for the network of Fig. 91 using the provided information.
For the self-bias configuration of Fig. 92, determine:a. $I_{D_{Q}}$ and $V_{G S_{0}}$.b. $V_{D S}$ and $V_{D}$.
For the network of Fig. 93, determine:a. $I_{D_{Q}}$ and $V_{G S_{Q}}$.b. $V_{D S}$ and $V_{S}$.
For the network of Fig. 94 , determine:a. $I_{D_{O}}$.b. $V_{G S_{O}}$ and $\bar{V}_{D S_{O}}$c. $V_{D}$ and $V_{S}$ -d. $V_{D S}$.
For the voltage-divider configuration of Fig. 95, determine:a. $I_{D_{Q}}$ and $V_{G S_{0}}$.b. $V_{D}$ and $V_{S}$ -
For the network of Fig. 96, determine:a. $V_{G}$b. $V_{G S_{Q}}$ and $I_{D_{Q}}$C. $I_{E}$.d. $I_{B}$.e. $V_{D}$f. $V_{C}$
For the combination network of Fig. 97 , determine:a. $V_{B}$ and $V_{G}$ -b. $V_{E}$ -c. $I_{E}, I_{C}$, and $I_{D}$.d. $I_{B}$.e. $V_{C}, V_{S}$, and $V_{D}$f. $V_{C E}$ -g. $V_{D S}$
Design a self-bias network using a JFET transistor with $I_{D S S}=8 \mathrm{~mA}$ and $V_{P}=-6 \mathrm{~V}$ to have a $Q$ -point at $I_{D_{Q}}=4 \mathrm{~mA}$ using a supply of $14 \mathrm{~V}$. Assume that $R_{D}=3 R_{S}$ and use standard values.
Design a voltage-divider bias network using a depletion-type MOSFET with $I_{D S S}=10 \mathrm{~mA}$ and $V_{P}=-4 \mathrm{~V}$ to have a $Q$ -point at $I_{D_{0}}=2.5 \mathrm{~mA}$ using a supply of $24 \mathrm{~V}$. In addition, set $V_{G}=4 \mathrm{~V}$ and use $R_{D}=2.5 R_{S}$ with $R_{1}=22 \mathrm{M} \Omega$. Use standard values.
Design a network such as appears in Fig. 39 using an enhancement-type MOSFET with $V_{G S(\mathrm{Th})}=4 \mathrm{~V}$ and $k=0.5 \times 10^{-3} \mathrm{~A} / \mathrm{V}^{2}$ to have a $Q$ -point of $I_{D_{Q}}=6 \mathrm{~mA}$. Use a supply of$16 \mathrm{~V}$ and standard values.
What do the readings for each configuration of Fig. 98 suggest about the operation of the network?
Although the readings of Fig. 99 initially suggest that the network is behaving properly, determine a possible cause for the undesirable state of the network.
The network of Fig. 100 is not operating properly. What is the specific cause for its failure?
For the network of Fig. 101 , determine:a. $I_{D_{0}}$ and $V_{G S_{Q}}$.b. $V_{D S-}$c. $V_{D}$.
For the network of Fig. 102, determine:a. $I_{D_{Q}}$ and $V_{G S_{0} \text { . }}$b. $V_{D S}$.c. $V_{D}$.
Repeat Problem 1 using the universal JFET bias curve.
Repeat Problem 6 using the universal JFET bias curve.
Repeat Problem 16 using the universal JFET bias curve.
Perform a PSpice Windows analysis of the network of Problem 1
Perform a PSpice Windows analysis of the network of Problem 6 .
Perform a Multisim analysis of the network of Problem 16 .
Perform a Multisim analysis of the network of Problem 33 .