(31.2) Total reflection in light-emitting diodes
In light-emitting diodes (LEDs), radiation occurs in a junction plane within a semiconductor whose index of refraction is quite large. For example, with GaAsP, $n=3.5$. Total reflection at the semiconductor-air interface limits the efficiency of LEDs to a few percent.
(a) Calculate the critical angle.
(b) Plot curves of $T_{1}$ and $T_{\perp}$ for $n_{1} / n_{2}=3.5$. Note that the transmission coefficients are equal and approximately independent of the angle of incidence when $\theta_{l}$ is small. Identify the Brewster angle.
(c) Assume that the face of the semiconductor is flat and parallel to the junction. The index of refraction is $n$.
Calculate the fraction $F$ of the light emitted at the source that reaches the surface at an angle smaller than the critical angle. Show that $F \approx 1 /\left(4 n^{2}\right)$.
(d) Show that $F T=1 /\left[n(n+1)^{2}\right]$.
(e) Calculate $F, T$, and $F T$ for $n=3.5$.
(f) Calculate $F T$ for an LED situated at the center of a hemisphere whose index of refraction is the same as that of the semiconductor. This is impractical because shaping the semiconductor is expensive.
(g) LEDs are usually covered with a hemispherical transparent resin whose $n$ is about $1.6 .$
Calculate the two transmission coefficients and the efficiency. The efficiency is improved, but it is still very low.