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The Oxford Solid State Basics

Steven H. Simon

Chapter 18

Semiconductor Devices - all with Video Answers

Educators


Chapter Questions

01:59

Problem 1

Semiconductor Quantum Well
(a) A quantum well is formed from a layer of GaAs of thickness $L \mathrm{~nm}$, surrounded by layers of $\mathrm{Ga}_{1-x} \mathrm{Al}_{x} \mathrm{As}$ (see Fig. 18.2). You may assume that the band gap of the $\mathrm{Ga}_{1-x} \mathrm{Al}_{x} \mathrm{As}$ is substantially larger than that of GaAs. The electron effective \text { than that of GaAs bulk material? }

Narayan Hari
Narayan Hari
Numerade Educator
01:59

Problem 2

Density of States for Quantum Wells
(a) Consider a quantum well as described in the previous exercise. Calculate the density of states for electrons and holes in the quantum well. Hint: It is a $2 \mathrm{D}$ electron gas, but don't forget that there are several particle-in-a-box states.
(b) Consider a so-called "quantum wire" which is a one-dimensional wire of GaAs embedded in surrounding $\mathrm{AlGaAs.}$ (You can consider the wire cross-section to be a square with side $30 \mathrm{~nm}$.) Describe the density of states for electrons or holes within the quantum wire. Why might this quantum wire make a yery good laser?

Narayan Hari
Narayan Hari
Numerade Educator
04:58

Problem 3

$p-n$ Junction*
Explain the origin of the depletion layer in an abrupt $p-n$ junction and discuss how the junction causes rectifcation to occur. Stating your assumptions, show that the total width $w$ of the depletion layer of a $p-n$ junction is:
$$
w=w_{n}+w_{p}
$$
where
$$
w_{n}=\left(\frac{2 \epsilon_{r} \epsilon_{0} N_{A} \phi_{0}}{e N_{D}\left(N_{A}+N_{D}\right)}\right)^{1 / 2}
$$
and a similar expression for $w_{p}$ Here $\epsilon_{r}$ is the relative permittivity and $N_{A}$ and $N_{D}$ are the acceptor and donor densities per unit volume, while $\phi_{0}$ is the difference in potential across the $p-n$ junction with no applied voltage. You will have to use Poisson's equation to calculate the form of $\phi$ given the presence of the ion charges in the depletion region. D Calculate the total depletion charge and infer how this changes when an additional voltage $V$ is applied.
$D$ What is the differential capacitance of the diode and why might it be useful to use a diode as a capacitor in an electronic circuit?

Stanley Enemuo
Stanley Enemuo
Numerade Educator
03:17

Problem 4

Single Heterojunction*
Consider an abrupt junction between an $n$-doped semiconductor with minimum conduction band energy $\epsilon_{c 1}$ and an undoped semiconductor with minimum conduction band energy $\epsilon_{c 2}$ where $\epsilon_{c 1}<\epsilon_{c 2}$. Describe qualitatively how this structure might result in a two-dimensional electron gas at the interface between the two semiconductors. Sketch the electrostatic potential as a function of position.

Chai Santi
Chai Santi
Numerade Educator
00:56

Problem 5

Diode Circuit
Design a circuit using diodes (and any other simple circuit elements you need) to convert an $\mathrm{AC}$ (alternating current) signal into a DC (direct current) signal.
$D{ }^{*}$ Can you use this device to design a radio reciever?

Keshav Singh
Keshav Singh
Numerade Educator
02:32

Problem 6

CMOS Circuit*
Design a circuit made of one $n$-MOSFET and one $p$-MOSFET (and some voltage sources etc.) which can act as a latch-meaning that it is stable in two possible states and can act a single bit memory (i.e., when it is turned on it stays on by itself, and when it is turned off it stays off by itself).

Adriano Chikande
Adriano Chikande
Numerade Educator