I am teaching as subject expert of advanced Physics on online platform (www. chegg.com) since last one year.I am teaching at Delhi University as Assistant Professor since last one year. I have passion for teaching and love to help the students in their academic.
Consider silicon doped at impurity concentrations of $N_{d}=2 \times 10^{16} \mathrm{~cm}^{-3}$ and $N_{a}=0 .$ An empirical expression relating electron drift velocity to electric field is given by$$v_{d}=\frac{\mu_{n 0} \mathrm{E}}{\sqrt{1+\left(\frac{\mu_{n 0} \mathrm{E}}{v_{\mathrm{sut}}}\right)^{2}}}$$where $\mu_{n 0}=1350 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s}, v_{\text {sat }}=1.8 \times 10^{7} \mathrm{~cm} / \mathrm{s}$, and $\mathrm{E}$ is given in $\mathrm{V} / \mathrm{cm} .$ Plotelectron drift current density (magnitude) versus electric field (log-log scale) over the range $0 \leq \mathrm{E} \leq 10^{6} \mathrm{~V} / \mathrm{cm}$
(a) Starting with the canonical commutation relations for position and momentum (Equation 4.10), work out the following commutators:$\left[L_{z}, x\right]=i \hbar y, \quad\left[L_{z}, y\right]=-i \hbar x, \quad\left[L_{z}, z\right]=0$,$\left[L_{z}, p_{x}\right]=i \hbar p_{y}, \quad\left[L_{z}, p_{y}\right]=-i \hbar p_{x}, \quad\left[L_{z}, p_{z}\right]=0$(b) Use these results to obtain $\left[L_{z}, L_{x}\right]=i \hbar L_{y}$ directly from Equation $4.96$.(c) Evaluate the commutators $\left[L_{z}, r^{2}\right]$ and $\left[L_{z}, p^{2}\right]$ (where, of course, $r^{2}=$ $x^{2}+y^{2}+z^{2}$ and $\left.p^{2}=p_{x}^{2}+p_{y}^{2}+p_{z}^{2}\right)$(d) Show that the Hamiltonian $H=\left(p^{2} / 2 m\right)+V$ commutes with all three components of $\mathbf{L}$, provided that $V$ depends only on $r$. (Thus $H, L^{2}$, and $L_{z}$ are mutually compatible observables.)
Use matrices to solve the simultaneous equations:$$\begin{array}{r}3 x+5 y-7=0 \\4 x-3 y-19=0\end{array}$$
Use matrices to solve the simultaneous equations:$$\begin{array}{r}x+y+z-4=0 \\2 x-3 y+4 z-33=0 \\3 x-2 y-2 z-2=0\end{array}$$
Solve the following simultaneous equations using determinants:$$\begin{aligned}&3 x-4 y=12 \\&7 x+5 y=6.5\end{aligned}$$
Could you solve it?
can anyone explain this?
Select the value of the following determinant when evaluated.
Find the reverse saturation current of the p-n junction Silicon diode which having forward bias 0.2 V at room temperature 290 K with diode current Boltzmann constant 8.62*10-5 eV/K.
The output characteristics of a MOSFET is a plot of Id as a function of Vgs with Vds as a parameter. b. Ig as a function of Vds with Vgs as a parameter. c. Ig as a function of Vgs with Vds as a parameter. d. Id as a function of Vds with Vgs as a parameter.
Discussion: 1 What is Iceo? 2 List various operating regions of Transistor 3 Suggest an electronic circuit to get the input and output characteristics on the screen of the oscilloscope. 4. List various biasing circuits. 5. Give Transistor current equation in CE configuration