00:01
For this problem on the topic of solid state physics, we are told that i doped n -type silicon sample has 10 to the power 16 electrons per cubic centimeter in the production band and has a resistivity of 5 times 10 to the minus 3 om meters at 300 kelvin.
00:15
We want to find the mean -free path of electrons and compare this with the mean -free path of electrons and copper at 300 -calvin.
00:22
So the mean -free path, we know lambda is equal to the effect of electron mass times the mean speed of electron.
00:31
Electrons v divided by the number density n times the resistivity row times the charge of the electron e squared and the mean speed v we know is equal to the square root of 3k t divided by the effective mass and so if we put our values into this equation we get v to be 3 times 1 .38 times 10 to the minus 23 joules per calvin.
01:06
Let's suppress the units here, times the temperature of 300 kelvin, divided by the effective mass, which is 0 .2me, or 0 .2 times 9 .11, times 10 to the minus 31 kg, and all of this to the power half.
01:26
So we get the mean speed to be 2 .61 times 10 to the power of 5 meters, per second...