Question
a. Draw the basic construction of a $p$ -channel JFET.b. Apply the proper biasing between drain and source and sketch the depletion region for $V_{G S}=0 \mathrm{~V}$
Step 1
The basic construction of a p-channel JFET consists of a p-type semiconductor material (the channel) sandwiched between two n-type materials (the gate). The three terminals are the source (S), the gate (G), and the drain (D). The source and drain are connected to Show more…
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Consider a one-sided silicon n-channel JFET at $T=300 \mathrm{~K}$, pinched off as shown in Figure P13.33. The source-to-gate and drain-to-gate reverse-biased currents are split geometrically as shown. Assume that the reverse-biased currents are dominated by the generation current. Assume the following parameters: $$ \begin{array}{rlrl} N_{a} & =5 \times 10^{18} \mathrm{~cm}^{-3} & N_{d} & =3 \times 10^{16} \mathrm{~cm}^{-3} \\ \tau_{0} & =5 \times 10^{-8} \mathrm{~s} & a & =0.30 \mu \mathrm{m} \\ W & =30 \mu \mathrm{m} & L & =2.4 \mu \mathrm{m} \end{array} $$ Calculate $I_{D G}$ for $(a) V_{D S}=0,(b) V_{D S}=1 \mathrm{~V}$, and $(c) V_{D S}=5 \mathrm{~V} .[$ Use Equation $(8.42)$ and consider the volume of the depletion region.]
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