Question

A P-N junction is said to be forward based when (A) a magnetic field is applied in the region of junction. (B) a potential difference is applied across $\mathrm{P}$ and $\mathrm{N}$ regions making $\mathrm{P}$ region negative and $\mathrm{N}$ region positive. (C) not potential difference is applied across $\mathrm{P}$ and $\mathrm{N}$ regions. (D) a potential difference is applied across $\mathrm{P}$ and $\mathrm{N}$ regions making P region positive and N region negative.

Name: Problem 2908, Chapter 38: JEE Physics
Uploaded: 2021-10-06T04:50:39-08:00
Duration: 1 min 1 s
Channel: Narayan Hari
Description: A P-N junction is said to be forward based when (A) a magnetic field is applied in the region of junction. (B) a potential difference is applied across P and N regions making P region negative and N region positive. (C) not potential difference is applied across P and N regions. (D) a potential difference is applied across P and N regions making P region positive and N region negative.

   A P-N junction is said to be forward based when
(A) a magnetic field is applied in the region of junction.
(B) a potential difference is applied across $\mathrm{P}$ and $\mathrm{N}$ regions making $\mathrm{P}$ region negative and $\mathrm{N}$ region positive.
(C) not potential difference is applied across $\mathrm{P}$ and $\mathrm{N}$ regions.
(D) a potential difference is applied across $\mathrm{P}$ and $\mathrm{N}$ regions making P region positive and N region negative.

JEE Physics

StemEZ 1st Edition

Chapter 38, Problem 2908

Instant Answer

Solved by Expert Narayan Hari

10/06/2021

Step 1

The P-type semiconductor has a positive charge due to the presence of holes, while the N-type semiconductor has a negative charge due to the presence of electrons. Show more…

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A P-N junction is said to be forward based when (A) a magnetic field is applied in the region of junction. (B) a potential difference is applied across $\mathrm{P}$ and $\mathrm{N}$ regions making $\mathrm{P}$ region negative and $\mathrm{N}$ region positive. (C) not potential difference is applied across $\mathrm{P}$ and $\mathrm{N}$ regions. (D) a potential difference is applied across $\mathrm{P}$ and $\mathrm{N}$ regions making P region positive and N region negative.

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Key Concepts

Forward Bias Operation

Forward biasing a P-N junction involves applying a voltage such that the p-side is at a higher potential than the n-side. This reduces the built-in potential barrier, allowing charge carriers to cross the junction more easily, which increases the current flow across the device.

P-N Junction

A P-N junction is formed when p-type and n-type semiconductor materials are in contact. This junction inherently has a built-in potential barrier created by the diffusion of charge carriers, which limits current flow until external energy is applied.

Biasing in Semiconductors

Biasing refers to the method of applying an external voltage across a semiconductor device to control its operation. Depending on the polarity of the applied voltage, a semiconductor junction can be forward biased or reverse biased, impacting the barrier for carrier movement.

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