A photo director area light of wavelength 1400 nm Band gap of the Semiconductor used in the pho

step 1 Okay, in this question we are asked that a photo detector area light of wavelength 1400 nanomete

A photo director area light of wavelength 1400 nm Band gap...

A photo director area light of wavelength $1400 \mathrm{~nm}$ Band gap of the Semiconductor used in the photo detector is $\left(\mathrm{h}=6.63 \times 10^{-34} \mathrm{JS} ; \mathrm{C}=3 \times 10^{8} \mathrm{~m} / \mathrm{s}\right)$ (A) $0.7 \mathrm{eV}$ (B) $1 \mathrm{eV}$ (C) $2 \mathrm{eV}$ (D) $2.5 \mathrm{eV}$

A photo director area light of wavelength $1400 \mathrm{~nm}$ Band gap of the Semiconductor used in the photo detector is $\left(\mathrm{h}=6.63 \times 10^{-34} \mathrm{JS} ; \mathrm{C}=3 \times 10^{8} \mathrm{~m} / \mathrm{s}\right)$
(A) $0.7 \mathrm{eV}$
(B) $1 \mathrm{eV}$
(C) $2 \mathrm{eV}$
(D) $2.5 \mathrm{eV}$

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Key Concepts

Photon Energy-Wavelength Relationship

This concept establishes that the energy of a photon is inversely proportional to its wavelength, expressed by the equation E = hc/?, where h is Planck's constant and c is the speed of light. It is a fundamental principle used to determine the energy of light when its wavelength is known, which is critical in quantum mechanics and various applications such as photodetection.

Bandgap Energy in Semiconductors

Bandgap energy refers to the energy difference between the valence band and the conduction band in a semiconductor. It indicates the minimum amount of energy required to excite an electron to a state where it can conduct electricity. This concept is essential in understanding how semiconductors respond to light and is a key parameter in the design and function of devices like photodetectors.

Unit Conversion between Joules and Electronvolts

In physics, energy is often expressed in Joules, but in semiconductor physics and quantum mechanics, electronvolts (eV) are more commonly used due to their convenient scale. Converting energy from Joules to eV (using the conversion factor where 1 eV is approximately 1.602 x 10^-19 Joules) is crucial for comparing photon energies to semiconductor bandgap energies.

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