Question
A silicon pn junction diode is to be designed to operate at $T=300 \mathrm{~K}$ such that the diode current is $I=10 \mathrm{~mA}$ at a diode voltage of $V_{D}=0.65 \mathrm{~V}$. The ratio of electron current to total current is to be $0.10$ and the maximum current density is to be no more than $20 \mathrm{~A} / \mathrm{cm}^{2}$. Use the semiconductor parameters given in Example $8.2$.
Step 1
Substituting the given values, we get $A = \frac{10 \times 10^{-3}}{20} = 5 \times 10^{-4} \, \text{cm}^2$. Show more…
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A silicon pn junction diode at $T=300 \mathrm{~K}$ has the following parameters: $N_{a}=N_{d}=$ $10^{16} \mathrm{~cm}^{-3}, \tau_{p 0}=\tau_{n 0}=\tau_{0}=5 \times 10^{-7} \mathrm{~s}, D_{p}=10 \mathrm{~cm}^{2} / \mathrm{s}, D_{n}=25 \mathrm{~cm}^{2} / \mathrm{s}$, and a cross- sectional area of $10^{-4} \mathrm{~cm}^{2} .$ Plot the diode recombination current and the ideal diode current (on a log scale) versus forward-bias voltage over the range $0.1 \leq V_{0} \leq 0.6 \mathrm{~V}$
An ideal silicon pn junction diode has a cross-sectional area of $A=5 \times 10^{-4} \mathrm{~cm}^{2}$. The doping concentrations are $N_{a}=4 \times 10^{15} \mathrm{~cm}^{-3}$ and $N_{d}=2 \times 10^{17} \mathrm{~cm}^{-3} .$ Assume that $E_{g}=1.12 \mathrm{eV}$ as well as the diffusion coefficients and lifetimes are independent of temperature. The ratio of the magnitude of forward- to reverse-biased currents is to be no less than $2 \times 10^{4}$ with forward- and reverse-biased voltages of $0.50 \mathrm{~V}$, and the maximum reverse-biased current is to be limited to $1.2 \mu \mathrm{A}$. Determine the maximum temperature at which the diode will meet these specifications and determine which specification is the limiting factor.
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